Efficient red perovskite quantum dots light-emitting diode fabricated by inkjet printing

Danyang Li; Junjie Wang; Miaozi Li; Biao Guo; Lan Mu; Yu Luo; Yi Xiao; Chaohuang Mai; Jian Wang; Junbiao Peng

doi:10.1088/2752-5724/ac3568

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Efficient red perovskite quantum dots light-emitting diode fabricated by inkjet printing

doi: 10.1088/2752-5724/ac3568

Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China

基金项目:

This work was supported by the National Natural Science Foundations of China (22090024, 51521002, 62074059), the Basic and Applied Basic Research Major Program of Guangdong Province (2019B030302007).

详细信息

通讯作者:
Junbiao Peng, psjbpeng@scut.edu.cn

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出版历程
- 收稿日期: 2021-09-06
- 录用日期: 2021-11-02
- 刊出日期: 2022-01-12

Efficient red perovskite quantum dots light-emitting diode fabricated by inkjet printing

Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China

Funds:

This work was supported by the National Natural Science Foundations of China (22090024, 51521002, 62074059), the Basic and Applied Basic Research Major Program of Guangdong Province (2019B030302007).

摘要

摘要:
Perovskite quantum dots (PeQDs) are considered potential display materials due to their high color purity, high photoluminescence quantum yield (PLQY), low cost and easy film casting. In this work, a novel electroluminescence (EL) device consisting of the interface layer of long alkyl-based oleylammonium bromide (OAmBr), which passivates the surface defects of PeQDs and adjusts the carrier transport properties, was designed. The PLQY of the OAmBr/PeQD bilayer was significantly improved. A high-performance EL device with the structure of indium tin oxide/poly(3,4-ethylenedioxythiophene) polystyrene sulfonate/poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine)/OAmBr/PeQDs/2,2^′,2^′′-(1,3,5-benzinetriyl)-tris(1-phenyl-1H benzimidazole)/LiF/Al was constructed using a spin-coating method. A peak external quantum efficiency (EQE) of 16.5% at the emission wavelength of 646 nm was obtained. Furthermore, an efficient matrix EL device was fabricated using an inkjet printing method. A high-quality PeQD matrix film was obtained by introducing small amounts of polybutene into the PeQDs to improve the printing process. The EQE reached 9.6% for the matrix device with 120 pixels per inch and the same device structure as that of the spin-coating one.
- perovskite quantum dot /
- light-emitting diode /
- inkjet print
Abstract:
Perovskite quantum dots (PeQDs) are considered potential display materials due to their high color purity, high photoluminescence quantum yield (PLQY), low cost and easy film casting. In this work, a novel electroluminescence (EL) device consisting of the interface layer of long alkyl-based oleylammonium bromide (OAmBr), which passivates the surface defects of PeQDs and adjusts the carrier transport properties, was designed. The PLQY of the OAmBr/PeQD bilayer was significantly improved. A high-performance EL device with the structure of indium tin oxide/poly(3,4-ethylenedioxythiophene) polystyrene sulfonate/poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine)/OAmBr/PeQDs/2,2^′,2^′′-(1,3,5-benzinetriyl)-tris(1-phenyl-1H benzimidazole)/LiF/Al was constructed using a spin-coating method. A peak external quantum efficiency (EQE) of 16.5% at the emission wavelength of 646 nm was obtained. Furthermore, an efficient matrix EL device was fabricated using an inkjet printing method. A high-quality PeQD matrix film was obtained by introducing small amounts of polybutene into the PeQDs to improve the printing process. The EQE reached 9.6% for the matrix device with 120 pixels per inch and the same device structure as that of the spin-coating one.
- perovskite quantum dot /
- light-emitting diode /
- inkjet print

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