High-brightness green InP-based QLEDs enabled by in-situ passivating core surface with zinc myristate

Yuanbin Cheng; Qian Li; Mengyuan Chen; Fei Chen; Zhenghui Wu; Huaibin Shen

doi:10.1088/2752-5724/ad3a83

Volume 3 Issue 2

June 2024

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Yuanbin Cheng, Qian Li, Mengyuan Chen, Fei Chen, Zhenghui Wu, Huaibin Shen. High-brightness green InP-based QLEDs enabled by in-situ passivating core surface with zinc myristate[J]. Materials Futures, 2024, 3(2): 025201. doi: 10.1088/2752-5724/ad3a83

Citation:

Yuanbin Cheng, Qian Li, Mengyuan Chen, Fei Chen, Zhenghui Wu, Huaibin Shen. High-brightness green InP-based QLEDs enabled by in-situ passivating core surface with zinc myristate[J]. Materials Futures, 2024, 3(2): 025201. doi: 10.1088/2752-5724/ad3a83

Citation:

Yuanbin Cheng, Qian Li, Mengyuan Chen, Fei Chen, Zhenghui Wu, Huaibin Shen. High-brightness green InP-based QLEDs enabled by in-situ passivating core surface with zinc myristate[J]. Materials Futures, 2024, 3(2): 025201. doi: 10.1088/2752-5724/ad3a83

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High-brightness green InP-based QLEDs enabled by in-situ passivating core surface with zinc myristate

Materials Futures, Volume 3, Number 2

Received Date: 2024-03-25
Accepted Date: 2024-04-03
Publish Date: 2024-04-23

Article information

doi: 10.1088/2752-5724/ad3a83

Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan University, Kaifeng 475004, People’s Republic of China
Co-first authors: Yuanbin Cheng, Qian Li

Funds:

This work was supported by the National Natural Science Foundation of China (Grant Nos. 62204078 and U22A2072) and the Natural Science Foundation of Henan Province for Excellent Youth Scholar (Grant No. 232300421092).

Abstract

Abstract

The performance of red InP and blue ZnTeSe-based quantum dots (QDs) and corresponding QD light emitting diodes (QLEDs) has already been improved significantly, whose external quantum efficiencies (EQEs) and luminances have exceeded 20% and 80 000 cd m⁻², respectively. However, the inferior performance of the green InP-based device hinders the commercialization of full-color Cd-free QLED technology. The ease of oxidation of the highly reactive InP cores leads to high non-radiative recombination and poor photoluminescence quantum yield (PL QY) of the InP-based core/shell QDs, limiting the performance of the relevant QLEDs. Here, we proposed a fluoride-free synthesis strategy to in-situ passivate the InP cores, in which zinc myristate reacted with phosphine dangling bonds to form Zn–P protective layer and protect InP cores from the water and oxygen in the environment. The resultant InP/ZnSe/ZnS core/shell QDs demonstrated a high PL QY of 91%. The corresponding green-emitting electroluminescence devices exhibited a maximum EQE of 12.74%, along with a luminance of over 175 000 cd m⁻² and a long T₅₀@100 cd m⁻² lifetime of over 20 000 h.
- quantum-dot light emitting diodes,
- InP-based quantum dot,
- in-situ passivation of core surface,
- zinc myristate

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References(37)

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