摘要: By utilizing the proximity effect, we introduce a platform that exploits ferroelectric switching to modulate spin currents in graphene proximitized by a ferroelectric In₂Se₃ monolayer. Through first-principles calculations and tight-binding modeling, we studied the electronic structure of graphene/In₂Se₃ heterostructure for twist angles of 0° and 17.5°, considering both ferroelectric polarizations. We discover that switching the ferroelectric polarization reverses the sign of the chargeto-spin conversion coefficients, acting as a chirality switch of the in-plane spin texture in graphene. For the twisted heterostructure, we observed the emergence of an unconventional radial Rashba field for one ferroelectric polarization direction. Additionally, we demonstrated that the Rashba phase can be directly extracted from the ratio of conversion efficiency coefficients, providing a straightforward approach to characterize the in-plane spin texture in graphene. All the unique features of the studied graphene/In₂Se₃ heterostructure can be experimentally detected, offering a promising approach for developing advanced spintronic devices with enhanced performance and efficiency.