Efficient red perovskite quantum dot light-emitting diode fabricated by inkjet printing

Danyang Li; Junjie Wang; Miaozi Li; Biao Guo; Lan Mu; Yu Luo; Yi Xiao; Chaohuang Mai; Jian Wang; Junbiao Peng

doi:10.1088/2752-5724/ac3568

Volume 1 Issue 1

March 2021

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Article Contents

Danyang Li, Junjie Wang, Miaozi Li, Biao Guo, Lan Mu, Yu Luo, Yi Xiao, Chaohuang Mai, Jian Wang, Junbiao Peng. Efficient red perovskite quantum dot light-emitting diode fabricated by inkjet printing[J]. Materials Futures, 2022, 1(1): 015301. doi: 10.1088/2752-5724/ac3568

Citation:

Danyang Li, Junjie Wang, Miaozi Li, Biao Guo, Lan Mu, Yu Luo, Yi Xiao, Chaohuang Mai, Jian Wang, Junbiao Peng. Efficient red perovskite quantum dot light-emitting diode fabricated by inkjet printing[J]. Materials Futures, 2022, 1(1): 015301. doi: 10.1088/2752-5724/ac3568

Citation:

Danyang Li, Junjie Wang, Miaozi Li, Biao Guo, Lan Mu, Yu Luo, Yi Xiao, Chaohuang Mai, Jian Wang, Junbiao Peng. Efficient red perovskite quantum dot light-emitting diode fabricated by inkjet printing[J]. Materials Futures, 2022, 1(1): 015301. doi: 10.1088/2752-5724/ac3568

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Efficient red perovskite quantum dot light-emitting diode fabricated by inkjet printing

Materials Futures, Volume 1, Number 1

Received Date: 2021-09-06
Accepted Date: 2021-11-02
Rev Recd Date: 2021-10-18
Publish Date: 2022-01-12

Article information

doi: 10.1088/2752-5724/ac3568

Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, People’s Republic of China
Funding

This work was supported by the National Natural Science Foundation of China (Grant Nos. 22090024, 51521002 and 62074059) and the Basic and Applied Basic Research Major Program of Guangdong Province (Grant No. 2019B030302007).

Conflicts of interests

The authors declare that they have no conflict of interest.

Author to whom any correspondence should be addressed.

More Information

Corresponding author: E-mail: psjbpeng@scut.edu.cn

Abstract

Abstract

Perovskite quantum dots (PeQDs) are considered potential display materials due to their high color purity, high photoluminescence quantum yield (PLQY), low cost and easy film casting. In this work, a novel electroluminescence (EL) device consisting of the interface layer of long alkyl-based oleylammonium bromide (OAmBr), which passivates the surface defects of PeQDs and adjusts the carrier transport properties, was designed. The PLQY of the OAmBr/PeQD bilayer was significantly improved. A high-performance EL device with the structure of indium tin oxide/poly(3,4-ethylenedioxythiophene) polystyrene sulfonate/poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine)/OAmBr/PeQDs/2,2,2-(1,3,5-benzinetriyl)-tris(1-phenyl-1H benzimidazole)/LiF/Al was constructed using a spin-coating method. A peak external quantum efficiency (EQE) of 16.5% at the emission wavelength of 646 nm was obtained. Furthermore, an efficient matrix EL device was fabricated using an inkjet printing method. A high-quality PeQD matrix film was obtained by introducing small amounts of polybutene into the PeQDs to improve the printing process. The EQE reached 9.6% for the matrix device with 120 pixels per inch and the same device structure as that of the spin-coating one.
- perovskite quantum dot,
- light-emitting diode,
- inkjet print

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Author contributions

Danyang Li and Junbiao Peng designed the experiments; Danyang Li performed the experiments; Junjie Wang, Miaozi Li, Yu Luo, Yi Xiao, Chaohuang Mai helped with the measurements. Biao Guo, Lan Mu helped with the inkjet printing operation. Danyang Li wrote the paper with support from Junbiao Peng. Jian Wang gave valuable advice. All authors contributed to the general discussion.

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