Volume 1 Issue 2
June  2022
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Liwei Liu, Yibo Sun, Xiaohe Huang, Chunsen Liu, Zhaowu Tang, Senfeng Zeng, David Wei Zhang, Shaozhi Deng, Peng Zhou. Ultrafast flash memory with large self-rectifying ratio based on atomically thin MoS2-channel transistor[J]. Materials Futures, 2022, 1(2): 025301. doi: 10.1088/2752-5724/ac7067
Citation: Liwei Liu, Yibo Sun, Xiaohe Huang, Chunsen Liu, Zhaowu Tang, Senfeng Zeng, David Wei Zhang, Shaozhi Deng, Peng Zhou. Ultrafast flash memory with large self-rectifying ratio based on atomically thin MoS2-channel transistor[J]. Materials Futures, 2022, 1(2): 025301. doi: 10.1088/2752-5724/ac7067
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Ultrafast flash memory with large self-rectifying ratio based on atomically thin MoS2-channel transistor

© 2022 The Author(s). Published by IOP Publishing Ltd on behalf of the Songshan Lake Materials Laboratory
Materials Futures, Volume 1, Number 2
  • Received Date: 2022-02-27
  • Accepted Date: 2022-05-17
  • Rev Recd Date: 2022-04-24
  • Publish Date: 2022-06-14
doi: 10.1088/2752-5724/ac7067
  • 1.

    Frontier Institute of Chip and System, Fudan University, Shanghai 200433, People’s Republic of China

  • 2.

    State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People’s Republic of China

  • 3.

    State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, People’s Republic of China

  • Authors to whom any correspondence should be addressed.

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    Abstract
  • Flash memory with high operation speed and stable retention performance is in great demand to meet the requirements of big data. In addition, the realisation of ultrafast flash memory with novel functions offers a means of combining heterogeneous components into a homogeneous device without considering impedance matching. This report proposes a 20 ns programme flash memory with 108 self-rectifying ratios based on a 0.65 nm-thick MoS2-channel transistor. A high-quality van der Waals heterojunction with a sharp interface is formed between the Cr/Au metal floating layer and h-BN tunnelling layer. In addition, the large rectification ratio and low ideality factor (n = 1.13) facilitate the application of the MoS2-channel flash memory as a bit-line select transistor. Finally, owing to the ultralow MoS2/h-BN heterojunction capacitance (50 fF), the memory device exhibits superior performance as a high-frequency (up to 1 MHz) sine signal rectifier. These results pave the way toward the potential utilisation of multifunctional memory devices in ultrafast two-dimensional NAND-flash applications.
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    • References(48)
  • [1]
    Bez R, Camerlenghi E, Modelli A, Visconti A 2003 Introduction to flash memory Proc. IEEE 91 489-502 doi: 10.1109/JPROC.2003.811702
    [2]
    Lee G-H, Hwang S, Yu J, Kim H 2011 Architecture and process integration overview of 3D NAND flash technologies Appl. Sci. 11 6703 doi: 10.3390/app11156703
    [3]
    Dumin D-J, Cooper J-R, Maddux J-R, Scott R-S, Wong D-P 1994 Low-level leakage currents in thin silicon oxide films J. Appl. Phys. 76 319-27 doi: 10.1063/1.357147
    [4]
    Hu C 1996 Gate oxide scaling limits and projection IEDM Technical Digest 319-22
    [5]
    Chhowalla M, Jena D, Zhang H 2016 Two-dimensional semiconductors for transistors Nat. Rev. Mater. 1 16052 doi: 10.1038/natrevmats.2016.52
    [6]
    Wang Y, Kim J-C, Wu R-J, Martinez J, Song X, Yang J, Zhao F, Mkhoyan A, Jeong H Y, Chhowalla M 2019 Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors Nature 568 70-74 doi: 10.1038/s41586-019-1052-3
    [7]
    Kang K, Lee K-H, Han Y, Gao H, Xie S, Muller D-A, Park J 2017 Layer-by-layer assembly of two-dimensional materials into wafer-scale heterostructures Nature 550 229-33 doi: 10.1038/nature23905
    [8]
    Zhang Z-C, Li Y, Li J, Chen X-D, Yao B-W, Yu M-X, Lu T-B, Zhang J 2021 An ultrafast nonvolatile memory with low operation voltage for high-speed and low-power applications Adv. Funct. Mater. 31 2102571 doi: 10.1002/adfm.202102571
    [9]
    Vu Q-A, Kim H, Nguyen V-L, Won U-Y, Adhikari S, Kim K, Lee Y-H, Yu W-J 2017 A high-on/off-ratio floating-gate memristor array on a flexible substrate via CVD-grown large-area 2D layer stacking Adv. Mater. 29 1703363 doi: 10.1002/adma.201703363
    [10]
    Liu C, Chen H, Wang S, Liu Q, Jiang Y-G, Zhang D-W, Liu M, Zhou P 2020 Two-dimensional materials for next-generation computing technologies Nat. Nanotechnol. 15 545-57 doi: 10.1038/s41565-020-0724-3
    [11]
    Jin T, Zheng Y, Gao J, Wang Y, Li E, Chen H, Pan X, Lin M, Chen W 2021 Controlling native oxidation of HfS2 for 2D materials based flash memory and artificial synapse ACS Appl. Mater. Interfaces 13 10639-49 doi: 10.1021/acsami.0c22561
    [12]
    Sasaki T, Ueno K, Taniguchi T, Watanabe K, Nishimura T, Nagashio K 2021 Material and device structure designs for 2D memory devices based on the floating gate voltage trejectory ACS Nano 15 6658-68 doi: 10.1021/acsnano.0c10005
    [13]
    Liu L, et al 2021 Ultrafast non-volatile memory based on van der Waals heterostructures Nat. Nanothchnol. 21 921 doi: 10.1038/s41565-021-00921-4
    [14]
    Wu L, et al 2021 Atomically sharp interface enabled ultrahigh-speed non-volatile memory device Nat. Nanothchnol. 21 904 doi: 10.1038/s41565-021-00904-5
    [15]
    Chen Y, Yu J, Zhuge F, He Y, Zhang Q, Yu S, Liu K, Li L, Ma Y, Zhai T 2020 An asymmetric hot carrier tunneling van der Waals heterostructure for multibit optoelectronic memory Mater. Horiz. 7 1331-40 doi: 10.1039/C9MH01923E
    [16]
    Wu E, Xie Y, Wang S, Zhang D, Hu X, Liu J 2020 Multi-level flash memory device based on stacked anisotropic ReS2-boron nitride-graphene heterostructures Nanoscale 12 18800-6 doi: 10.1039/D0NR03965A
    [17]
    Zhao C, Zhao C-Z, Taylor S, Chalker P-R 2014 Review on non-volatile memory with high-k dielectrics: flash for generation beyond 32 nm Materials 7 5117-45 doi: 10.3390/ma7075117
    [18]
    Chen W, Liu W J, Zhang M, Ding S J, Zhang D W, Li M F 2007 Multistacked Al2O3/HfO2/SiO2 tunnel layer for high-density nonvolatile memory application Appl. Phys. Lett. 91 022908 doi: 10.1063/1.2756849
    [19]
    Lin Y-H, Chine C-H, Lin C-T, Chang C-Y, Lei T-F 2006 Novel two-bit HfO2 nanocrystal nonvolatile flash memory IEEE Trans. Electron Devices 53 782-9 doi: 10.1109/TED.2006.871190
    [20]
    Jayanti S, Yang X, Suri R, Misra V 2010 Ultimate scalability of TaN metal floating gate with incorporation of high-k blocking dielectrics for flash memory applications IEDM(IEEE) 5.3.1-5.3.4
    [21]
    Lee S, Seong H, Im S-G, Moon H, Yoo S 2017 Organic flash memory on various flexible substrates for foldable and disposable electronics Nat. Commun. 8 725 doi: 10.1038/s41467-017-00805-z
    [22]
    Hong S, Park J, Lee J-J, Lee S, Yun K, Yoo H, Kim S 2021 Multifunctional molybdenum disulfide flash memory using a PEDOT:PSS floating gate NPG Asia Mater. 13 38 doi: 10.1038/s41427-021-00307-x
    [23]
    Naqi M, Kwon N, Jung S-H, Pujar P, Cho H-W, Cho Y-I, Cho H-K, Lim B, Kim S 2021 High-performance non-volatile InGaZnO based flash memory device embedded with a monolayer Au nanoparticles Nanomaterials 11 1101 doi: 10.3390/nano11051101
    [24]
    Chen H, Zhou Y, Han S-T 2021 Recent advances in metal nanoparticles-based floating gate memory Nano Sel. 2 1245-65 doi: 10.1002/nano.202000268
    [25]
    Lee J-S 2021 Recent progress in gold nanoparticle-based non-volatile memory devices Gold Bull. 43 189-99 doi: 10.1007/BF03214986
    [26]
    Han S-T, Zhou Y, Xu Z-X, Huang L-B, Yang X-B, Roy V-A-L 2012 Microcontact printing of ultrahigh density gold nanoparticle monolayer for flexible flash memories Adv. Mater. 24 3556-61 doi: 10.1002/adma.201201195
    [27]
    Allain A, Kang J, Banerjee K, Kis A 2015 Electrical contacts to two-dimensional semiconductors Nat. Mater. 14 1195-205 doi: 10.1038/nmat4452
    [28]
    Shen P-C, et al 2021 Ultralow contact resistance between semimetal and monolayer semiconductors Nature 593 211 doi: 10.1038/s41586-021-03472-9
    [29]
    Moun M, Singh A, Singh R 2018 Study of electrical behavior of metal-semiconductor contacts on exfoliated MoS2 flakes Phys. Status Solidi a 215 1800188 doi: 10.1002/pssa.201800188
    [30]
    Yang S-J, Park K-T, Im J, Hong S, Lee Y, Min B-W, Kim K, Im S 2020 Ultrafast 27 GHz cutoff frequency in vertical WSe2 Schottky diodes with extremely low contact resistance Nat. Commun. 11 1574 doi: 10.1038/s41467-020-15419-1
    [31]
    Zhao Y, Xiao X, Huo Y, Wang Y, Zhang T, Jiang K, Wang J, Fan S, Li Q 2017 Influence of asymmetric contact form on contact resistance and schottky barrier, and corresponding applications of diode ACS Appl. Mater. Interfaces 9 18945-55 doi: 10.1021/acsami.7b04076
    [32]
    Wu F, et al 2019 High efficiency and fast van der Waals hetero-photodiodes with a unilateral depletion region Nat. Commun. 10 4663 doi: 10.1038/s41467-019-12707-3
    [33]
    Hosseini S-A, Esfandiar A, Iraji Zad A, Hosseini-Shokouh S-H, Mahdavi S-M 2019 High-photoresponsive backward diode by two-dimensional SnS2/silicon heterostructure ACS Photonics 6 728-34 doi: 10.1021/acsphotonics.8b01626
    [34]
    Murali K, Dandu M, Das S, Majumdar K 2018 Gate-tunable WSe2/SnSe2 backward diode with ultrahigh-reverse rectification ratio ACS Appl. Mater. Interfaces 10 5657-64 doi: 10.1021/acsami.7b18242
    [35]
    Aftab S, Khan M-F, Gautam P, Noh H, Eom J 2019 MoTe2 van der Waals homojunction p-n diode with low resistance metal contacts Nanoscale 11 9518-25 doi: 10.1039/C8NR10526J
    [36]
    Liu L, Xu N-S, Zhang Y, Zhao P, Chen H, Deng S 2019 Van der Waals bipolar junction transistor using vertically stacked two-dimensional atomic crystals Adv. Funct. Mater. 29 1807893 doi: 10.1002/adfm.201807893
    [37]
    Liu L, Liu C, Huang X, Zeng S, Tang Z, Zhang D-W, Zhou P 2022 Tunable current regulative diode based on van der Waals stacked MoS2/WSe2 heterojunction-channel field-effect transistor Adv. Electron. Mater. 8 2100869 doi: 10.1002/aelm.202100869
    [38]
    Vu Q-A, et al 2016 Two-terminal floating-gate memory with van der Waals heterodtructures for ultrahigh on/off ratio Nat. Commun. 7 12725 doi: 10.1038/ncomms12725
    [39]
    Di Bartolomeo A, et al 2018 Asymmetric Schottky contacts in bilayer MoS2 field effect transistors Adv. Funct. Mater. 28 1800657 doi: 10.1002/adfm.201800657
    [40]
    Sze S-M, Kwok K-N 2006 Physics of Semiconductor DevicesHoboken, NJWiley
    [41]
    Liu Y, Wang P, Wang Y, Lin Z, Liu H, Huang J, Huang Y, Duan X 2020 van der Waals integrated devices based on nanomembranes of 3D materials Nano Lett. 20 1410-6 doi: 10.1021/acs.nanolett.9b05027
    [42]
    AQ J, et al 2020 Ferroelectric domain wall memory with embedded selector realized in LiNbO3 single crystals integrated on Si wafers Nat. Mater. 19 1188-94 doi: 10.1038/s41563-020-0702-z
    [43]
    Carthy D-M, Duane R, O’Shea M, Duffy R, Carthy K-M, Kelliher A-M, Concannon A, Mathewson A 2003 A novel CMOS-compatible top-floating-gate EEPROM cell for embedded applications IEEE Trans. Electron Devices 50 1708-10 doi: 10.1109/TED.2003.814988
    [44]
    Tran M-D, Kim H, Kim J-S, Doan M-H, Chau T-K, Vu Q-A, Kim J-H, Lee Y-H 2019 Two-terminal multibit optical memory via van der Waals heterostructure Adv. Mater. 31 1807075 doi: 10.1002/adma.201807075
    [45]
    Li Y, Long S, Liu Q, Lv H, Liu M 2017 Resistive switching performance improvement via modulating nanoscale conductive filament, involving the application of two-dimensional layered materials Small 13 1604306 doi: 10.1002/smll.201604306
    [46]
    Dastgeer G, Abbas H, Kim D-Y, Eom J, Choi C 2021 Synaptic characteristics of an ultrathin hexagonal boron nitride (h-BN) diffusive memristor Phys. Status Solidi 15 2000473 doi: 10.1002/pssr.202000473
    [47]
    Liu K, et al 2021 A wafer-scale van der Waals dielectric made from an inorganic molecular crystal film Nat. Electron. 4 906-13 doi: 10.1038/s41928-021-00683-w
    [48]
    Li T, et al 2020 A native oxide high- gate dielectric for two-dimensional electronics Nat. Electron. 3 473-8 doi: 10.1038/s41928-020-0444-6
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