Volume 3 Issue 1
March  2024
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Article Contents
Ma Yuhang, Yi Huaxin, Liang Huanrong, Wang Wan, Zheng Zhaoqiang, Yao Jiandong, Yang Guowei. Low-dimensional van der Waals materials for linear-polarization-sensitive photodetection: materials, polarizing strategies and applications[J]. Materials Futures, 2024, 3(1): 012301. doi: 10.1088/2752-5724/acf9ba
Citation: Ma Yuhang, Yi Huaxin, Liang Huanrong, Wang Wan, Zheng Zhaoqiang, Yao Jiandong, Yang Guowei. Low-dimensional van der Waals materials for linear-polarization-sensitive photodetection: materials, polarizing strategies and applications[J]. Materials Futures, 2024, 3(1): 012301. doi: 10.1088/2752-5724/acf9ba
Topical Review •

Low-dimensional van der Waals materials for linear-polarization-sensitive photodetection: materials, polarizing strategies and applications

© 2024 The Author(s). Published by IOP Publishing Ltd on behalf of the Songshan Lake Materials Laboratory
Materials Futures, Volume 3, Number 1
  • Received Date: 2023-08-07
  • Accepted Date: 2023-09-13
  • Rev Recd Date: 2023-09-06
  • Publish Date: 2024-01-03
  • Detecting light from a wealth of physical degrees of freedom (e.g. wavelength, intensity, polarization state, phase, etc) enables the acquirement of more comprehensive information. In the past two decades, low-dimensional van der Waals materials (vdWMs) have established themselves as transformative building blocks toward lensless polarization optoelectronics, which is highly beneficial for optoelectronic system miniaturization. This review provides a comprehensive overview on the recent development of low-dimensional vdWM polarized photodetectors. To begin with, the exploitation of pristine 1D/2D vdWMs with immanent in-plane anisotropy and related heterostructures for filterless polarization-sensitive photodetectors is introduced. Then, we have systematically epitomized the various strategies to induce polarization photosensitivity and enhance the degree of anisotropy for low-dimensional vdWM photodetectors, including quantum tailoring, construction of core-shell structures, rolling engineering, ferroelectric regulation, strain engineering, etc, with emphasis on the fundamental physical principles. Following that, the ingenious optoelectronic applications based on the low-dimensional vdWM polarized photodetectors, including multiplexing optical communications and enhanced-contrast imaging, have been presented. In the end, the current challenges along with the future prospects of this burgeoning research field have been underscored. On the whole, the review depicts a fascinating landscape for the next-generation high-integration multifunctional optoelectronic systems.
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  • Conflict of interest

    There are no conflicts to declare.

    Author contributions

    Conceptualization: J Y and G Y; Data curation: Y M, H Y, W W, and H L; Funding acquisition: J Y, and G Y; Project administration: J Y and G Y; Resources: J Y and G Y; Supervision: J Y and G Y; Visualization: Y M and H Y; Writingoriginal draft: Y M, H Y, and H L; Writingreview & editing: J Y All authors have approved the final version of the manuscript.

  • [1]
    Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Electric field effect in atomically thin carbon films Science 306 666-9 doi: 10.1126/science.1102896
    Yao J D, Zheng Z Q, Yang G W 2019 Production of large-area 2D materials for high-performance photodetectors by pulsed-laser deposition Prog. Mater. Sci. 106 100573 doi: 10.1016/j.pmatsci.2019.100573
    Fei H, Liu R, Zhang Y, Wang H, Wang M, Wang S, Ni M, Wu Z, Wang J 2023 Extending MoS2-based materials into the catalysis of non-acidic hydrogen evolution: challenges, progress, and perspectives Mater. Futures 2 022103 doi: 10.1088/2752-5724/acc51d
    Qin J K, Wang C, Zhen L, Li L J, Xu C Y, Chai Y 2021 Van der Waals heterostructures with one-dimensional atomic crystals Prog. Mater. Sci. 122 100856 doi: 10.1016/j.pmatsci.2021.100856
    Mu H, Yu W, Yuan J, Lin S, Zhang G 2022 Interface and surface engineering of black phosphorus: a review for optoelectronic and photonic applications Mater. Futures 1 012301 doi: 10.1088/2752-5724/ac49e3
    An L, Yu Y, Cai Q, Mateti S, Li L H, Chen Y I 2023 Hexagonal boron nitride nanosheets: preparation, heat transport property and application as thermally conductive fillers Prog. Mater. Sci. 138 101154 doi: 10.1016/j.pmatsci.2023.101154
    Sun C B, Zhong Y W, Fu W J, Zhao Z Q, Liu J, Ding J, Han X P, Deng Y D, Hu W B, Zhong C 2020 Tungsten disulfide-based nanomaterials for energy conversion and storage Tungsten 2 109-33 doi: 10.1007/s42864-020-00038-6
    Xing S, Zhou J, Zhang X, Elliott S, Sun Z 2023 Theory, properties and engineering of 2D magnetic materials Prog. Mater. Sci. 132 101036 doi: 10.1016/j.pmatsci.2022.101036
    Wang C, Zhang L, Zhang Z, Zhao R, Zhao D, Ma R, Yin L 2020 Layered materials for supercapacitors and batteries: applications and challenges Prog. Mater. Sci. 118 100763 doi: 10.1016/j.pmatsci.2020.100763
    Balandin A A, Kargar F, Salguero T T, Lake R K 2022 One-dimensional van der Waals quantum materials Mater. Today 55 74-91 doi: 10.1016/j.mattod.2022.03.015
    Yao J, Yang G 2022 2D layered material alloys: synthesis and application in electronic and optoelectronic devices Adv. Sci. 9 2103036 doi: 10.1002/advs.202103036
    Angizi S, Alem S A A, Hasanzadeh Azar M, Shayeganfar F, Manning M I, Hatamie A, Pakdel A, Simchi A 2022 A comprehensive review on planar boron nitride nanomaterials: from 2D nanosheets towards 0D quantum dots Prog. Mater. Sci. 124 100884 doi: 10.1016/j.pmatsci.2021.100884
    Yao J, Yang G 2020 2D materials broadband photodetectors Nanoscale 12 454-76 doi: 10.1039/C9NR09070C
    Ares P, Novoselov K S 2022 Recent advances in graphene and other 2D materials Nano Mater. Sci. 4 3-9 doi: 10.1016/j.nanoms.2021.05.002
    Yao J D, Yang G W 2021 All-2D architectures toward advanced electronic and optoelectronic devices Nano Today 36 101026 doi: 10.1016/j.nantod.2020.101026
    Liu X, Kang W, Li X, Zeng L, Li Y, Wang Q, Zhang C 2023 Solid-state mechanochemistry advancing two dimensional materials for lithium-ion storage applications: a mini review Nano Mater. Sci. 5 210-27 doi: 10.1016/j.nanoms.2022.03.005
    Yao J, Yang G W 2021 Multielement 2D layered material photodetectors Nanotechnology 32 392001 doi: 10.1088/1361-6528/ac0a16
    Liu H, You C Y, Li J, Galligan P R, You J, Liu Z, Cai Y, Luo Z 2021 Synthesis of hexagonal boron nitrides by chemical vapor deposition and their use as single photon emitters Nano Mater. Sci. 3 291-312 doi: 10.1016/j.nanoms.2021.03.002
    Yao J, Yang G 2022 Van der Waals heterostructures based on 2D layered materials: fabrication, characterization, and application in photodetection J. Appl. Phys. 131 161101 doi: 10.1063/5.0087503
    Zhao Y, Zheng X, Gao P, Li H 2023 Recent advances in defect-engineered molybdenum sulfides for catalytic applications Mater. Horiz. 10 3948-99 doi: 10.1039/D3MH00462G
    Chen C, et al 2023 Growth of single-crystal black phosphorus and its alloy films through sustained feedstock release Nat. Mater. 22 717-24 doi: 10.1038/s41563-023-01516-1
    Lu J, He Y, Ma C, Ye Q, Yi H, Zheng Z, Yao J, Yang G 2023 Ultrabroadband imaging based on wafer-scale tellurene Adv. Mater. 35 2211562 doi: 10.1002/adma.202211562
    Wu W, et al 2023 High-speed carbon nanotube photodetectors for 2 m communications ACS Nano 17 15155-64 doi: 10.1021/acsnano.3c04619
    Koepfli S M, et al 2023 Metamaterial graphene photodetector with bandwidth exceeding 500 gigahertz Science 380 1169-74 doi: 10.1126/science.adg8017
    Dodda A, et al 2022 Active pixel sensor matrix based on monolayer MoS2 phototransistor array Nat. Mater. 21 1379-87 doi: 10.1038/s41563-022-01398-9
    Zhu J, et al 2023 Low-thermal-budget synthesis of monolayer molybdenum disulfide for silicon back-end-of-line integration on a 200mm platform Nat. Nanotechnol. 18 456-63 doi: 10.1038/s41565-023-01375-6
    Han W, et al 2023 Phase-controllable large-area two-dimensional In2Se3 and ferroelectric heterophase junction Nat. Nanotechnol. 18 55-63 doi: 10.1038/s41565-022-01257-3
    Nie J H, Li R, Miao M P, Fu Y S, Zhang W 2023 Atomically constructing a van der Waals heterostructure of CrTe2/Bi2Te3 by molecular beam epitaxy Mater. Futures 2 021001 doi: 10.1088/2752-5724/acbd64
    Wang F, Mao J 2023 2D TaSe2 as a zero-strain and high-performance anode material for Li+ storage Mater. Horiz. 10 1780-8 doi: 10.1039/D3MH00072A
    Ye Q, Xu D, Cai B, Lu J, Yi H, Ma C, Zheng Z, Yao J, Ouyang G, Yang G 2022 High-performance hierarchical O-SnS/I-ZnIn2S4 photodetectors by leveraging the synergy of optical regulation and band tailoring Mater. Horiz. 9 2364-75 doi: 10.1039/D2MH00612J
    Zou T, et al 2023 High-performance solution-processed 2D P-type WSe2 transistors and circuits through molecular doping Adv. Mater. 35 2208934 doi: 10.1002/adma.202208934
    Noh G, et al 2022 Large memory window of van der Waals heterostructure devices based on MOCVD-grown 2D layered Ge4Se9 Adv. Mater. 34 2204982 doi: 10.1002/adma.202204982
    Jo H K, et al 2023 Wafer-scale production of two-dimensional tin monoselenide: expandable synthetic platform for van der Waals semiconductor-based broadband photodetectors ACS Nano 17 1372-80 doi: 10.1021/acsnano.2c09854
    Lu J, Deng Z, Ye Q, Zheng Z, Yao J, Yang G 2022 Promoting the performance of 2D material photodetectors by dielectric engineering Small Methods 6 2101046 doi: 10.1002/smtd.202101046
    Maiti R, et al 2020 Strain-engineered high-responsivity MoTe2 photodetector for silicon photonic integrated circuits Nat. Photon. 14 578-84 doi: 10.1038/s41566-020-0647-4
    Liu L, Sun Y, Huang X, Liu C, Tang Z, Zeng S, Zhang D W, Deng S, Zhou P 2022 Ultrafast flash memory with large self-rectifying ratio based on atomically thin MoS2 channel transistor Mater. Futures 1 025301 doi: 10.1088/2752-5724/ac7067
    Ding J Y, Liu Z T, Huang Z, Jiang Z C, Yang Y C, Liu Z H, Liu J S, Guo Y F, Shen D W 2023 Investigation of the room-temperature photoelectron spectroscopy of type-II Weyl semimetal candidate WTe2 Tungsten 5 350-6 doi: 10.1007/s42864-023-00209-1
    Jang H, Liu C, Hinton H, Lee M H, Kim H, Seol M, Shin H J, Park S, Ham D 2020 An atomically thin optoelectronic machine vision processor Adv. Mater. 32 2002431 doi: 10.1002/adma.202002431
    Li N, et al 2020 Large-scale flexible and transparent electronics based on monolayer molybdenum disulfide field-effect transistors Nat. Electron. 3 711-7 doi: 10.1038/s41928-020-00475-8
    Liu M, et al 2021 Controlled growth of large-sized and phase-selectivity 2D GaTe crystals Small 17 2007909 doi: 10.1002/smll.202007909
    Chang Y R, et al 2023 Shift-current photovoltaics based on a non-centrosymmetric phase in in-plane ferroelectric SnS Adv. Mater. 35 2301172 doi: 10.1002/adma.202301172
    Feng R, et al 2023 Selective control of phases and electronic structures of monolayer TaTe2 Adv. Mater. 35 2302297 doi: 10.1002/adma.202302297
    Li L, Wang W, Gong P, Zhu X, Deng B, Shi X, Gao G, Li H, Zhai T 2018 2D GeP: an unexploited low-symmetry semiconductor with strong in-plane anisotropy Adv. Mater. 30 1706771 doi: 10.1002/adma.201706771
    Xie X, et al 2023 Observation of optical anisotropy and a linear dichroism transition in layered silicon phosphide Nanoscale 15 12388-97 doi: 10.1039/D3NR01765F
    Zhou L, et al 2022 Unconventional excitonic states with phonon sidebands in layered silicon diphosphide Nat. Mater. 21 773-8 doi: 10.1038/s41563-022-01285-3
    Yang Y, et al 2021 Intrinsic toughening and stable crack propagation in hexagonal boron nitride Nature 594 57-61 doi: 10.1038/s41586-021-03488-1
    Knobloch T, et al 2021 The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials Nat. Electron. 4 98-108 doi: 10.1038/s41928-020-00529-x
    Li D, Xu Z, Yang M, Zhong J, Hao W, Du Y, Zhuang J 2023 Bandgap engineering and photodetector applications in Bi(I1-xBrx3 single crystals Appl. Phys. Lett. 123 011102 doi: 10.1063/5.0150907
    Grzeszczyk M, et al 2023 Strongly correlated exciton-magnetization system for optical spin pumping in CrBr3 and CrI3 Adv. Mater. 35 2209513 doi: 10.1002/adma.202209513
    Wu J, Yao Y, Lin M L, Rsner M, Du Z, Watanabe K, Taniguchi T, Tan P H, Haas S, Wang H 2022 Spin-phonon coupling in ferromagnetic monolayer chromium tribromide Adv. Mater. 34 2108506 doi: 10.1002/adma.202108506
    Zhang C, et al 2023 Single-crystalline van der Waals layered dielectric with high dielectric constant Nat. Mater. 22 832-7 doi: 10.1038/s41563-023-01502-7
    Lin Y, Xinxin P, Zhenhai W, Haitao H 2022 Solid-state Z-scheme assisted hydrated tungsten trioxide/ZnIn2S4 photocatalyst for efficient photocatalytic H2 production Mater. Futures 1 035103 doi: 10.1088/2752-5724/ac7faf
    Li J, et al 2022 Chemical vapor deposition of quaternary 2D BiCuSeO p-type semiconductor with intrinsic degeneracy Adv. Mater. 34 2207796 doi: 10.1002/adma.202207796
    Fang Y, Yang K, Zhang E, Liu S, Jia Z, Zhang Y, Wu H, Xiu F, Huang F 2022 Quasi-1D van der Waals antiferromagnetic CrZr4Te14 with large in-plane anisotropic negative magnetoresistance Adv. Mater. 34 2200145 doi: 10.1002/adma.202200145
    Majed A, Kothakonda M, Wang F, Tseng E N, Prenger K, Zhang X, Persson P O , Wei J, Sun J, Naguib M 2022 Transition metal carbo-chalcogenide TMCC:’ a new family of 2D materials Adv. Mater. 34 2200574 doi: 10.1002/adma.202200574
    Ye Q, et al 2023 Quaternary AgInP2S6: a prospective robust van der Waals semiconductor for high-speed photodetectors and their application in high-temperature-proof optical communications Adv. Opt. Mater. 11 2300463 doi: 10.1002/adom.202300463
    Zeng Y, et al 2022 2D FeOCl: a highly in-plane anisotropic antiferromagnetic semiconductor synthesized via temperature-oscillation chemical vapor transport Adv. Mater. 34 2108847 doi: 10.1002/adma.202108847
    Zhang Y, et al 2023 Ternary GePdS3: 1D van der Waals nanowires for integration of high-performance flexible photodetectors ACS Nano 17 8743-54 doi: 10.1021/acsnano.3c01977
    Chen J, et al 2022 A submicrosecond-response ultraviolet-visible-near-infrared broadband photodetector based on 2D tellurosilicate InSiTe3 ACS Nano 16 7745-54 doi: 10.1021/acsnano.1c11628
    Guo T, et al 2023 High-performance flexible broadband photodetectors enabled by 2D Ta2NiSe5 nanosheets 2D Mater. 10 025004 doi: 10.1088/2053-1583/acb1c3
    Sun Z, Yu P, Wang F, Wang F, Yao Y, Zhan X, Wang Z, He J 2022 High-performance ultraviolet photodetectors based on 2D layered In4/3P2Se6 nanoflakes Appl. Phys. Lett. 120 103506 doi: 10.1063/5.0085766
    Lu Y, et al 2023 Synthesis and broadband photodetection of a P-Type 1D Van der Waals semiconductor HfSnS3 Small 19 2303903 doi: 10.1002/smll.202303903
    Li Y, et al 2023 Polarization-sensitive photodetector based on high crystallinity Quasi-1D BiSeI nanowires synthesized via chemical vapor deposition Small 19 2302623 doi: 10.1002/smll.202302623
    Shi X B, He P, Zhao W W 2023 Dual topology in van der Waals-type superconductor Nb2S2C Tungsten 5 357-63 doi: 10.1007/s42864-022-00135-8
    Boix-Constant C, Maas-Valero S, Ruiz A M, Rybakov A, Konieczny K A, Pillet S, Baldov J J, Coronado E 2022 Probing the spin dimensionality in single-layer CrSBr Van Der Waals heterostructures by magneto-transport measurements Adv. Mater. 34 2204940 doi: 10.1002/adma.202204940
    Zong A, et al 2023 Spin-mediated shear oscillators in a van der Waals antiferromagnet Nature 620 988-93 doi: 10.1038/s41586-023-06279-y
    Xu Y, et al 2023 Scalable integration of hybrid high- dielectric materials on two-dimensional semiconductors Nat. Mater. 22 1078-84 doi: 10.1038/s41563-023-01626-w
    Choi C, et al 2017 Human eye-inspired soft optoelectronic device using high-density MoS2-graphene curved image sensor array Nat. Commun. 8 1664 doi: 10.1038/s41467-017-01824-6
    Lien M B, Liu C H, Chun I Y, Ravishankar S, Nien H, Zhou M, Fessler J A, Zhong Z, Norris T B 2020 Ranging and light field imaging with transparent photodetectors Nat. Photon. 14 143-8 doi: 10.1038/s41566-019-0567-3
    Bullock J, et al 2018 Polarization-resolved black phosphorus/molybdenum disulfide mid-wave infrared photodiodes with high detectivity at room temperature Nat. Photon. 12 601-7 doi: 10.1038/s41566-018-0239-8
    Deng W, et al 2022 Switchable unipolar-barrier Van der Waals heterostructures with natural anisotropy for full linear polarimetry detection Adv. Mater. 34 2203766 doi: 10.1002/adma.202203766
    Fang Y, Wang F, Wang R, Zhai T, Huang F 2021 2D NbOI2: a chiral semiconductor with highly in-plane anisotropic electrical and optical properties Adv. Mater. 33 2101505 doi: 10.1002/adma.202101505
    Guo C, Chen Z, Yu X, Zhang L, Wang X, Chen X, Wang L 2022 Ultrasensitive anisotropic room-temperature terahertz photodetector based on an intrinsic magnetic topological insulator MnBi2Te4 Nano Lett. 22 7492-8 doi: 10.1021/acs.nanolett.2c02434
    Klein J, et al 2023 The bulk van der Waals layered magnet CrSBr is a quasi-1D material ACS Nano 17 5316-28 doi: 10.1021/acsnano.2c07316
    Guo J, Xiao Z, Wu Z, Liao X, Wan S, Fu X, Zhou Y 2022 Quasi-1D ZrS3 as an anisotropic nano-reflector for manipulating light-matter interactions Adv. Opt. Mater. 10 2201030 doi: 10.1002/adom.202201030
    Qin J K, et al 2020 Raman response and transport properties of tellurium atomic chains encapsulated in nanotubes Nat. Electron. 3 141-7 doi: 10.1038/s41928-020-0365-4
    Kim T Y, et al 2022 Colloidal synthesis of 1-D van der Waals material Nb2Se9: study of synergism of coordinating agent in a co-solvent system Nanoscale 14 17365-71 doi: 10.1039/D2NR04513C
    Das B, Dolui K, Paramanik R, Kundu T, Maity S, Ghosh A, Palit M, Datta S 2023 Ultrahigh breakdown current density of van der Waals one dimensional PdBr2 Appl. Phys. Lett. 122 263504 doi: 10.1063/5.0150243
    Kargar F, et al 2022 Elemental excitations in MoI3 one-dimensional van der Waals nanowires Appl. Phys. Lett. 121 221901 doi: 10.1063/5.0129904
    Du L, et al 2021 Giant anisotropic photonics in the 1D van der Waals semiconductor fibrous red phosphorus Nat. Commun. 12 4822 doi: 10.1038/s41467-021-25104-6
    Yang W, et al 2021 Low-noise dual-band polarimetric image sensor based on 1D Bi2S3 nanowire Adv. Sci. 8 2100075 doi: 10.1002/advs.202100075
    Shui Z D, Wang S, Yang Z, Wang D, Tian B Z, Luo S, Wang Z, Yang L 2023 Polarization-sensitive self-powered tellurium microwire near-infrared photodetector Appl. Phys. Lett. 122 101902 doi: 10.1063/5.0142575
    Wan P, Jiang M, Wei Y, Xu T, Liu Y, Xia S, Su L, Shi D, Fang X, Kan C 2023 Junction-enhanced polarization sensitivity in self-powered near-infrared photodetectors based on Sb2Se3 microbelt/n-GaN heterojunction Adv. Opt. Mater. 11 2202080 doi: 10.1002/adom.202202080
    Luo Z, et al 2023 High-performance and polarization-sensitive imaging photodetector based on WS2/Te tunneling heterostructure Small 19 2207615 doi: 10.1002/smll.202207615
    He X, et al 2016 Wafer-scale monodomain films of spontaneously aligned single-walled carbon nanotubes Nat. Nanotechnol. 11 633-8 doi: 10.1038/nnano.2016.44
    Balestrieri M, et al 2017 Polarization-sensitive single-wall carbon nanotubes all-in-one photodetecting and emitting device working at 1.55 m Adv. Funct. Mater. 27 1702341 doi: 10.1002/adfm.201702341
    Zubair A, Wang X, Mirri F, Tsentalovich D E, Fujimura N, Suzuki D, Soundarapandian K P, Kawano Y, Pasquali M, Kono J 2018 Carbon nanotube woven textile photodetector Phys. Rev. Mater. 2 015201 doi: 10.1103/PhysRevMaterials.2.015201
    Zhou H, Wang J, Ji C, Liu X, Han J, Yang M, Gou J, Xu J, Jiang Y 2019 Polarimetric Vis-NIR photodetector based on self-aligned single-walled carbon nanotubes Carbon 143 844-50 doi: 10.1016/j.carbon.2018.11.072
    Peng M, et al 2021 Blackbody-sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition Sci. Adv. 7 eabf7358 doi: 10.1126/sciadv.abf7358
    Zhao Q, Gao F, Chen H, Gao W, Xia M, Pan Y, Shi H, Su S, Fang X, Li J 2021 High performance polarization-sensitive self-powered imaging photodetectors based on a p-Te/n-MoSe2 van der Waals heterojunction with strong interlayer transition Mater. Horiz. 8 3113-23 doi: 10.1039/D1MH01287H
    Zhou Y, Han L, Song Q, Gao W, Yang M, Zheng Z, Huang L, Yao J, Li J 2022 Hybrid 1D/2D heterostructure with electronic structure engineering toward high-sensitivity and polarization-dependent photodetector Sci. China Mater. 65 732-40 doi: 10.1007/s40843-021-1847-7
    Ma W, et al 2022 Ultrabroadband tellurium photoelectric detector from visible to millimeter wave Adv. Sci. 9 2103873 doi: 10.1002/advs.202103873
    Wei X, Wang S, Zhang N, Li Y, Tang Y, Jing H, Lu J, Xu Z, Xu H 2023 Single-orientation epitaxy of quasi-1D tellurium nanowires on M-plane sapphire for highly uniform polarization sensitive short-wave infrared photodetection Adv. Funct. Mater. 33 2300141 doi: 10.1002/adfm.202300141
    Nanot S, Cummings A W, Pint C L, Ikeuchi A, Akiho T, Sueoka K, Hauge R H, Lonard F, Kono J 2013 Broadband, polarization-sensitive photodetector based on optically-thick films of macroscopically long, dense and aligned carbon nanotubes Sci. Rep. 3 1335 doi: 10.1038/srep01335
    Xu X, Fan C, Wang Y, Qi Z, Dai B, Jiang H, Wang S, Zhang Q 2020 In-plane epitaxy of Bi2S3 nanowire arrays for ultrasensitive NIR photodetectors Phys. Status Solidi 14 2000384 doi: 10.1002/pssr.202000384
    Wang H, Liu R, Zhang S, Wang Y, Luo H, Sun X, Ren Y, Lei W 2022 Controlled growth of high-quality Bi2S3 nanowires and their application in near-infrared photodetection Opt. Mater. 134 113174 doi: 10.1016/j.optmat.2022.113174
    Yi H, et al 2023 Quantum tailoring for polarization-discriminating Bi2S3 nanowire photodetectors and their multiplexing optical communication and imaging applications Mater. Horiz. 10 3369-81 doi: 10.1039/D3MH00733B
    Zhao K, et al 2021 Direct polarimetric image sensor and wide spectral response based on quasi-1D Sb2S3 nanowire Adv. Funct. Mater. 31 2006601 doi: 10.1002/adfm.202006601
    Ma Z, et al 2019 Chemical vapor deposition growth of high crystallinity Sb2Se3 nanowire with strong anisotropy for near-infrared photodetectors Small 15 1805307 doi: 10.1002/smll.201805307
    Zhang S, Wang H, Kirchner M M, Liu J, Luo H, Ren Y, Yuan C, Hattori H T, Miroshnichenko A E, Lei W 2022 Ultrathin Sb2Se3 nanowires for polarimetric imaging photodetectors with a high signal/noise ratio Adv. Mater. Interfaces 9 2200448 doi: 10.1002/admi.202200448
    Zhang S, Wang H, Pan W, Luo H, Ren Y, Liang Y, Tan J, Yuan C, Lei W 2023 Polarization-sensitive near-infrared photodetectors based on quasi-one-dimensional Sb2Se3 nanotubes J. Alloys Compd. 937 168284 doi: 10.1016/j.jallcom.2022.168284
    Yang H, Pan L, Wang X, Deng H X, Zhong M, Zhou Z, Lou Z, Shen G, Wei Z 2019 Mixed-valence-driven quasi-1D SnIISnIVS3 with highly polarization-sensitive UV-vis-NIR photoresponse Adv. Funct. Mater. 29 1904416 doi: 10.1002/adfm.201904416
    Qin Q, et al 2023 Self-powered, ultra-broadband, and polarization-sensitive photodetectors based on 1D van der Waals layered material Nb2Pd3Se8 J. Mater. Chem. A 11 11517-25 doi: 10.1039/D3TA01223A
    Ke S, et al 2023 Ultrafast polarization sensitive photodetector based on MoS2/Ta2Pd3Se8 hybrid dimensional heterostructure Adv. Opt. Mater. 11 2300593 doi: 10.1002/adom.202300593
    Li Z, Xu B, Liang D, Pan A 2020 Polarization-dependent optical properties and optoelectronic devices of 2D materials Research 2020 5464258 doi: 10.34133/2020/5464258
    Wang X, Jones A M, Seyler K L, Tran V, Jia Y, Zhao H, Wang H, Yang L, Xu X, Xia F 2015 Highly anisotropic and robust excitons in monolayer black phosphorus Nat. Nanotechnol. 10 517-21 doi: 10.1038/nnano.2015.71
    Chen Y, et al 2018 Black arsenic: a layered semiconductor with extreme in-plane anisotropy Adv. Mater. 30 1800754 doi: 10.1002/adma.201800754
    Xing Z, Xiaozong H, Shasha Z, Qi Z, Huiqiao L, Tianyou Z 2017 Ultrathin 2D GeSe2 rhombic flakes with high anisotropy realized by van der Waals epitaxy Adv. Funct. Mater. 27 1703858 doi: 10.1002/adfm.201703858
    Yang Y, et al 2019 In-plane optical anisotropy of low-symmetry 2D GeSe Adv. Opt. Mater. 7 1801311 doi: 10.1002/adom.201801311
    Sun J, Deacon R S, Luo W, Yuan Y, Liu X, Xie H, Gao Y, Ishibashi K 2020 Asymmetric Fermi velocity induced chiral magnetotransport anisotropy in the type-II Dirac semi-metal PtSe2 Commun. Phys. 3 93 doi: 10.1038/s42005-020-0357-8
    Lu L, et al 2020 Layer-dependent and in-plane anisotropic properties of low-temperature synthesized few-layer PdSe2 single crystals ACS Nano 14 4963-72 doi: 10.1021/acsnano.0c01139
    Wang J P, et al 2023 Non-centrosymmetric 2D Nb3SeI7 with high in-plane anisotropy and optical nonlinearity Adv. Opt. Mater. 11 2300031 doi: 10.1002/adom.202300031
    Liu S, et al 2023 Anisotropic optical and mechanical properties in few-layer GaPS4 Adv. Opt. Mater. 11 2202288 doi: 10.1002/adom.202202288
    Su J, Shen W, Chen J, Yang S, Liu J, Feng X, Zhao Y, Hu C, Li H, Zhai T 2021 2D ternary vanadium phosphorous chalcogenide with strong in-plane optical anisotropy Inorg. Chem. Front. 8 2999-3006 doi: 10.1039/D1QI00390A
    Ghosh S, Kargar F, Sesing N R, Barani Z, Salguero T T, Yan D, Rumyantsev S, Balandin A A 2023 Low-frequency current fluctuations in quasi-1D (TaSe42I Weyl semimetal nanoribbons Adv. Electron. Mater. 9 2200860 doi: 10.1002/aelm.202200860
    Sun Z, Zhang B, Zhao Y, Khurram M, Yan Q 2021 Synthesis, exfoliation, and transport properties of quasi-1D van der Waals fibrous red phosphorus Chem. Mater. 33 6240-8 doi: 10.1021/acs.chemmater.1c02136
    Qiao L, et al 2021 Ultralong single-crystal -Bi4Br4 nanobelts with a high current-carrying capacity by mechanical exfoliation J. Phys. Chem. C 125 22312-7 doi: 10.1021/acs.jpcc.1c06702
    Wu Z, Lyu Y, Zhang Y, Ding R, Zheng B, Yang Z, Lau S P, Chen X H, Hao J 2021 Large-scale growth of few-layer two-dimensional black phosphorus Nat. Mater. 20 1203-9 doi: 10.1038/s41563-021-01001-7
    Yang Q, Wang X, He Z, Chen Y, Li S, Chen H, Wu S 2023 A centimeter-scale type-II Weyl semimetal for flexible and fast ultra-broadband photodetection from ultraviolet to sub-millimeter wave regime Adv. Sci. 10 2205609 doi: 10.1002/advs.202205609
    Yang Y, et al 2018 Air-stable in-plane anisotropic GeSe2 for highly polarization-sensitive photodetection in short wave region J. Am. Chem. Soc. 140 4150-6 doi: 10.1021/jacs.8b01234
    Yang Y, Liu S C, Wang X, Li Z, Zhang Y, Zhang G, Xue D J, Hu J S 2019 Polarization-sensitive ultraviolet photodetection of anisotropic 2D GeS2 Adv. Funct. Mater. 29 1900411 doi: 10.1002/adfm.201900411
    Dai M, Wang C, Ye M, Zhu S, Han S, Sun F, Chen W, Jin Y, Chua Y, Wang Q J 2022 High-performance, polarization-sensitive, long-wave infrared photodetection via photothermoelectric effect with asymmetric van der Waals contacts ACS Nano 16 295-305 doi: 10.1021/acsnano.1c06286
    Xiong J, Sun Y, Wu L, Wang W, Gao W, Huo N, Li J 2021 High performance self-driven polarization-sensitive photodetectors based on GeAs/InSe heterojunction Adv. Opt. Mater. 9 2101017 doi: 10.1002/adom.202101017
    Li S, Zhang J, Zhu L, Zhang K, Gao W, Li J, Huo N 2023 Reconfigurable and broadband polarimetric photodetector Adv. Funct. Mater. 33 2210268 doi: 10.1002/adfm.202210268
    Chang T Y, Chen P L, Yan J H, Li W Q, Zhang Y Y, Luo D I, Li J X, Huang K P, Liu C H 2020 Ultra-broadband, high speed, and high-quantum-efficiency photodetectors based on black phosphorus ACS Appl. Mater. Interfaces 12 1201-9 doi: 10.1021/acsami.9b13472
    Usman M, Nisar S, Kim D K, Golovynskyi S, Imran M, Dastgeer G, Wang L 2023 Polarization-sensitive photodetection of anisotropic 2D black arsenic J. Phys. Chem. C 127 9076-82 doi: 10.1021/acs.jpcc.2c08630
    Yuan S, et al 2018 Air-stable room-temperature mid-infrared photodetectors based on hBN/black arsenic phosphorus/hBN heterostructures Nano Lett. 18 3172-9 doi: 10.1021/acs.nanolett.8b00835
    Zhu W, Wei X, Yan F, Lv Q, Hu C, Wang K 2019 Broadband polarized photodetector based on p-BP/n-ReS2 heterojunction J. Semicond. 40 092001 doi: 10.1088/1674-4926/40/9/092001
    Jiao H, et al 2022 HgCdTe/black phosphorus van der Waals heterojunction for high-performance polarization-sensitive midwave infrared photodetector Sci. Adv. 8 eabn1811 doi: 10.1126/sciadv.abn1811
    Lai J, et al 2018 Anisotropic broadband photoresponse of layered type-II Weyl semimetal MoTe2 Adv. Mater. 30 1707152 doi: 10.1002/adma.201707152
    Wang Q, et al 2019 Robust edge photocurrent response on layered type II Weyl semimetal WTe2 Nat. Commun. 10 5736 doi: 10.1038/s41467-019-13713-1
    Ahn J, Kyhm J H, Kang H K, Kwon N, Kim H K, Park S, Hwang D K 2021 2D MoTe2/ReS2 van der Waals heterostructure for high-performance and linear polarization-sensitive photodetector ACS Photonics 8 2650-8 doi: 10.1021/acsphotonics.1c00598
    Sun Y, Xiong J, Wu X, Gao W, Huo N, Li J 2021 Highly sensitive infrared polarized photodetector enabled by out-of-plane PSN architecture composing of p-MoTe2, semimetal-MoTe2 and n-SnSe2 Nano Res. 15 5384-91 doi: 10.1007/s12274-021-4008-5
    Wu J, et al 2022 Engineering the polarization sensitivity in all-2D photodetectors composed of semimetal MoTe2 and semiconductor WS2 Adv. Opt. Mater. 10 2201902 doi: 10.1002/adom.202201902
    Liu S, Xiao W, Zhong M, Pan L, Wang X, Deng H X, Liu J, Li J, Wei Z 2018 Highly polarization sensitive photodetectors based on quasi-1D titanium trisulfide (TiS3) Nanotechnology 29 184002 doi: 10.1088/1361-6528/aaafa2
    Chen F, Liu G, Xiao Z, Zhou H, Fei L, Wan S, Liao X, Yuan J, Zhou Y 2023 Quasi-one-dimensional ZrS3 nanoflakes for broadband and polarized photodetection with high tuning flexibility ACS Appl. Mater. Interfaces 15 16999-7008 doi: 10.1021/acsami.3c00273
    Wang X, Xiong T, Xin K, Yang J, Liu Y, Zhao Z, Liu J, Wei Z 2022 Polarization sensitive photodetector based on quasi-1D ZrSe3 J. Semicond. 43 102001 doi: 10.1088/1674-4926/43/10/102001
    Wang Y, et al 2020 Air-stable low-symmetry narrow-bandgap 2D sulfide niobium for polarization photodetection Adv. Mater. 32 2005037 doi: 10.1002/adma.202005037
    Niu Y, Frisenda R, Flores E, Ares J R, Jiao W, Perez de Lara D, Snchez C, Wang R, Ferrer I J, Castellanos-Gomez A 2018 Polarization-sensitive and broadband photodetection based on a mixed-dimensionality TiS3/Si p-n junction Adv. Opt. Mater. 6 1800351 doi: 10.1002/adom.201800351
    Lv T, et al 2022 High-responsivity multiband and polarization-sensitive photodetector based on the TiS3/MoS2 heterojunction ACS Appl. Mater. Interfaces 14 48812-20 doi: 10.1021/acsami.2c12332
    Yang S, et al 2019 Highly sensitive polarization photodetection using a pseudo-one-dimensional Nb(1-x)TixS3 alloy ACS Appl. Mater. Interfaces 11 3342-50 doi: 10.1021/acsami.8b19050
    Niu Y, et al 2020 Ultrabroadband, fast, and flexible photodetector based on HfTe5 crystal Adv. Opt. Mater 8 2000833 doi: 10.1002/adom.202000833
    Guo Z, et al 2021 High-performance polarization-sensitive photodetectors on two-dimensional -InSe Nat. Sci. Rev. 9 nwab098 doi: 10.1093/nsr/nwab098
    Pan Y, Zhao Q, Gao F, Dai M, Gao W, Zheng T, Su S, Li J, Chen H 2022 Strong in-plane optical and electrical anisotropies of multilayered -InSe for high-responsivity polarization-sensitive photodetectors ACS Appl. Mater. Interfaces 14 21383-91 doi: 10.1021/acsami.2c04204
    Hou S, et al 2022 Optical and electronic anisotropy of a 2D semiconductor SiP Nano Res. 15 8579-86 doi: 10.1007/s12274-022-4481-5
    Wang Z, et al 2021 Strong in-plane anisotropic SiP2 as a IV-V 2D semiconductor for polarized photodetection ACS Nano 15 20442-52 doi: 10.1021/acsnano.1c08892
    Kim D, Park K, Lee J H, Kwon I S, Kwak I H, Park J 2021 Anisotropic 2D SiAs for high-performance UV-visible photodetectors Small 17 2006310 doi: 10.1002/smll.202006310
    Zhou Z, et al 2018 Perpendicular optical reversal of the linear dichroism and polarized photodetection in 2D GeAs ACS Nano 12 12416-23 doi: 10.1021/acsnano.8b06629
    Li L, et al 2018 Highly in-plane anisotropic 2D GeAs2 for polarization-sensitive photodetection Adv. Mater. 30 1804541 doi: 10.1002/adma.201804541
    Xiong J, Dan Z, Li H, Li S, Sun Y, Gao W, Huo N, Li J 2022 Multifunctional GeAs/WS2 heterojunctions for highly polarization-sensitive photodetectors in the short-wave infrared range ACS Appl. Mater. Interfaces 14 22607-14 doi: 10.1021/acsami.2c03246
    Zhang J, Shang C, Dai X, Zhang Y, Zhu T, Zhou N, Xu H, Yang R, Li X 2023 Effective passivation of anisotropic 2D GeAs via graphene encapsulation for highly stable near-infrared photodetectors ACS Appl. Mater. Interfaces 15 13281-9 doi: 10.1021/acsami.2c20030
    Li Z, Yang Y, Wang X, Shi W, Xue D J, Hu J S 2019 Three-dimensional optical anisotropy of low-symmetry layered GeS ACS Appl. Mater. Interfaces 11 24247-53 doi: 10.1021/acsami.9b05543
    Zhou X, Hu X, Jin B, Yu J, Liu K, Li H, Zhai T 2018 Highly anisotropic GeSe nanosheets for phototransistors with ultrahigh photoresponsivity Adv. Sci. 5 1800478 doi: 10.1002/advs.201800478
    Cui Y, Zhou Z, Wang X, Wang X, Ren Z, Pan L, Yang J 2021 Wavelength-selectivity polarization dependence of optical absorption and photoresponse in SnS nanosheets Nano Res. 14 2224-30 doi: 10.1007/s12274-020-3197-7
    Yu Y, Xiong T, Guo Z, Hou S, Yang J, Liu Y Y, Gu H, Wei Z 2022 Wide-spectrum polarization-sensitive and fast-response photodetector based on 2D group IV-VI semiconductor tin selenide Fundam. Res. 2 985-92 doi: 10.1016/j.fmre.2022.02.008
    Xin Y, et al 2020 Polarization-sensitive self-powered type-II GeSe/MoS2 van der Waals heterojunction photodetector ACS Appl. Mater. Interfaces 12 15406-13 doi: 10.1021/acsami.0c01405
    Fucai L, et al 2016 Highly sensitive detection of polarized light using anisotropic 2D ReS2 Adv. Funct. Mater. 26 1169-77 doi: 10.1002/adfm.201504546
    Li G, Yin S, Tan C, Chen L, Yu M, Li L, Yan F 2021 Fast photothermoelectric response in CVD-grown PdSe2 photodetectors with in-plane anisotropy Adv. Funct. Mater. 31 2104787 doi: 10.1002/adfm.202104787
    Zeng L H, Chen Q M, Zhang Z X, Wu D, Yuan H, Li Y Y, Qarony W, Lau S P, Luo L B, Tsang Y H 2019 Multilayered PdSe2/perovskite Schottky junction for fast, self-powered, polarization-sensitive, broadband photodetectors, and image sensor application Adv. Sci. 6 1901134 doi: 10.1002/advs.201901134
    Tang Y, Hao H, Kang Y, Liu Q, Sui Y, Wei K, Cheng X A, Jiang T 2020 Distinctive interfacial charge behavior and versatile photoresponse performance in isotropic/anisotropic WS2/ReS2 heterojunctions ACS Appl. Mater. Interfaces 12 53475-83 doi: 10.1021/acsami.0c14886
    Li K, Du C, Gao H, Yin T, Zheng L, Leng J, Wang W 2022 Ultrafast and polarization-sensitive ReS2/ReSe2 heterostructure photodetectors with ambipolar photoresponse ACS Appl. Mater. Interfaces 14 33589-97 doi: 10.1021/acsami.2c09674
    Ahn J, et al 2021 Near-infrared self-powered linearly polarized photodetection and digital incoherent holography using WSe2/ReSe2 van der Waals heterostructure ACS Nano 15 17917-25 doi: 10.1021/acsnano.1c06234
    Quan S, Guo S, Weller D, Fu S, Wang Y, Liu R 2022 Air-stable GaSe/ReS2 heterojunctions for self-powered polarization-sensitive photodetectors ACS Appl. Nano Mater. 5 7365-72 doi: 10.1021/acsanm.2c01303
    Zhang J, Duan L, Zhou N, Zhang L, Shang C, Xu H, Yang R, Wang X, Li X 2023 Modulating the function of GeAs/ReS2 van der Waals heterojunction with its potential application for short-wave infrared and polarization-sensitive photodetection Small 19 2303335 doi: 10.1002/smll.202303335
    Lai J, Liu Y, Ma J, Zhuo X, Peng Y, Lu W, Liu Z, Chen J, Sun D 2018 Broadband anisotropic photoresponse of the hydrogen atom’ version type-II Weyl semimetal candidate TaIrTe4 ACS Nano 12 4055-61 doi: 10.1021/acsnano.8b01897
    Qiao J, Feng F, Wang Z, Shen M, Zhang G, Yuan X, Somekh M G 2021 Highly in-plane anisotropic two-dimensional ternary Ta2NiSe5 for polarization-sensitive photodetectors ACS Appl. Mater. Interfaces 13 17948-56 doi: 10.1021/acsami.1c00268
    Zhang H, et al 2021 In-plane anisotropic 2D CrPS4 for promising polarization-sensitive photodetection Appl. Phys. Lett. 119 171102 doi: 10.1063/5.0066143
    Wang X, Xiong T, Zhao K, Zhou Z, Xin K, Deng H X, Kang J, Yang J, Liu Y Y, Wei Z 2021 Polarimetric image sensor and Fermi level shifting induced multichannel transition based on 2D PdPS Adv. Mater. 34 2107206 doi: 10.1002/adma.202107206
    Bai R, et al 2022 Polarization-sensitive and wide-spectrum photovoltaic detector based on quasi-1D ZrGeTe4 nanoribbon InfoMat 4 e12258 doi: 10.1002/inf2.12258
    Meng X, et al 2023 Giant superlinear power dependence of photocurrent based on layered Ta2NiS5 photodetector Adv. Sci. 10 2300413 doi: 10.1002/advs.202300413
    Yang L, et al 2023 Low-power polarization sensitive terahertz photodetection driven by ternary type-II Weyl semimetal NbIrTe4 IEEE Electron Device Lett. 44 686-9 doi: 10.1109/LED.2023.3250468
    Ye Q, Lu J, Yi H, Zheng Z, Ma C, Du C, Zou Y, Yao J, Yang G 2022 A flexibly switchable TaIrTe4-WSe2 van der Waals heterojunction photodetector with linear-polarization-dependent photosensitivity Appl. Phys. Lett. 120 181104 doi: 10.1063/5.0091084
    Han X, Wen P, Zhang L, Gao W, Chen H, Gao F, Zhang S, Huo N, Zou B, Li J 2021 A polarization-sensitive self-powered photodetector based on a p-WSe2/TaIrTe4/n-MoS2 van der Waals heterojunction ACS Appl. Mater. Interfaces 13 61544-54 doi: 10.1021/acsami.1c19526
    Tan J, Nan H, Fu Q, Zhang X, Liu X, Ni Z, Ostrikov K, Xiao S, Gu X 2022 Fourfold polarization-sensitive photodetector based on GaTe/MoS2 van der Waals heterojunction Adv. Electron. Mater. 8 2100673 doi: 10.1002/aelm.202100673
    Lu J, Ye Q, Ma C, Zheng Z, Yao J, Yang G 2022 Dielectric contrast tailoring for polarized photosensitivity toward multiplexing optical communications and dynamic encrypt technology ACS Nano 16 12852-65 doi: 10.1021/acsnano.2c05114
    Yi H, et al 2023 Multilayer SnS2/few-layer MoS2 heterojunctions with in-situ floating photogate toward high-performance photodetectors and optical imaging application Sci. China Mater. 66 1879-90 doi: 10.1007/s40843-022-2338-9
    Dong Z, et al 2021 Highly efficient, ultrabroad PdSe2 phototransistors from visible to terahertz driven by mutiphysical mechanism ACS Nano 15 20403-13 doi: 10.1021/acsnano.1c08756
    Zhang F, Mo Z, Cui B, Liu S, Xia Q, Li B, Li L, Zhang Z, He J, Zhong M 2023 Bandgap engineering of BiInS nanowire for wide-spectrum, high-responsivity, and polarimetric-sensitive detection Adv. Funct. Mater. 33 2306077 doi: 10.1002/adfm.202306077
    Ghoshal D, Wang T, Tsai H Z, Chang S W, Crommie M, Koratkar N, Shi S F 2019 Catalyst-free and morphology-controlled growth of 2D perovskite nanowires for polarized light detection Adv. Opt. Mater. 7 1900039 doi: 10.1002/adom.201900039
    Johnston M B, Joyce H J 2022 Polarization anisotropy in nanowires: fundamental concepts and progress towards terahertz-band polarization devices Prog. Quantum Electron. 85 100417 doi: 10.1016/j.pquantelec.2022.100417
    Gruba Z, Kati J, Metiko-Hukovi M 2019 Energy-band structure as basis for semiconductor n-Bi2S3/n-Bi2O3 photocatalyst design J. Electrochem. Soc. 166 H433-H7 doi: 10.1149/2.0481910jes
    Gates B, Mayers B, Grossman A, Xia Y 2002 A sonochemical approach to the synthesis of crystalline selenium nanowires in solutions and on solid supports Adv. Mater. 14 1749-52 doi: 10.1002/1521-4095(20021203)14:23<1749::AID-ADMA1749>3.0.CO;2-Z
    Thunich S, Prechtel L, Spirkoska D, Abstreiter G, Fontcuberta I Morral A, Holleitner A W 2009 Photocurrent and photoconductance properties of a GaAs nanowire Appl. Phys. Lett. 95 083111 doi: 10.1063/1.3193540
    Persano A, Nabet B, Taurino A, Prete P, Lovergine N, Cola A 2011 Polarization anisotropy of individual core/shell GaAs/AlGaAs nanowires by photocurrent spectroscopy Appl. Phys. Lett. 98 153106 doi: 10.1063/1.3578189
    Xiao M, et al 2020 Symmetry-reduction enhanced polarization-sensitive photodetection in core-shell SbI3/Sb2O3 van der Waals heterostructure Small 16 1907172 doi: 10.1002/smll.201907172
    Cheng Y, Gong M, Xu T, Liu E, Fan J, Miao H, Hu X 2022 Epitaxial grown Sb2Se3@Sb2S3 core-shell nanorod radial-axial hierarchical heterostructure with enhanced photoelectrochemical water splitting performance ACS Appl. Mater. Interfaces 14 23785-96 doi: 10.1021/acsami.2c05551
    Li W, Li J, Ma T, Liao G, Gao F, Duan W, Luo K, Wang C 2023 Construction of core-shell Sb2S3@CdS nanorod with enhanced heterointerface interaction for chromium-containing wastewater treatment Small 19 2302737 doi: 10.1002/smll.202302737
    Guo L, Shinde P S, Ma Y, Li L, Pan S, Yan F 2020 Scalable core-shell MoS2/Sb2Se3 nanorod array photocathodes for enhanced photoelectrochemical water splitting Sol. RRL 4 1900442 doi: 10.1002/solr.201900442
    Cao B, Liu Q, Zheng Y, Tang X, Chai J, Ma S, Wang W, Li G 2022 Wafer-scale InN/In2S3 core-shell nanorod array for ultrafast self-powered photodetection Adv. Funct. Mater. 32 2110715 doi: 10.1002/adfm.202110715
    Dai G, Xiang Y, Mo X, Xiao Z, Yuan H, Wan J, Liu B, Yang J 2022 High-performance CdS@CsPbBr3 core-shell microwire heterostructure photodetector J. Appl. Phys. 55 194002 doi: 10.1088/1361-6463/ac520b
    Chen T A, et al 2020 Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111) Nature 579 219-23 doi: 10.1038/s41586-020-2009-2
    Li T, et al 2021 Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire Nat. Nanotechnol. 16 1201-7 doi: 10.1038/s41565-021-00963-8
    Wang J, et al 2022 Dual-coupling-guided epitaxial growth of wafer-scale single-crystal WS2 monolayer on vicinal a-plane sapphire Nat. Nanotechnol. 17 33-38 doi: 10.1038/s41565-021-01004-0
    Li J, et al 2022 Wafer-scale single-crystal monolayer graphene grown on sapphire substrate Nat. Mater. 21 740-7 doi: 10.1038/s41563-021-01174-1
    Deng T, Li S, Li Y, Zhang Y, Sun J, Yin W, Wu W, Zhu M, Wang Y, Liu Z 2020 Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors Nanophotonics 9 4719-28 doi: 10.1515/nanoph-2020-0401
    Zhang X, Dai M, Deng W, Zhang Y, Wang Q J 2023 A broadband, self-powered, and polarization-sensitive PdSe2 photodetector based on asymmetric van der Waals contacts Nanophotonics 12 607-18 doi: 10.1515/nanoph-2022-0660
    Yang B, et al 2023 Visible and infrared photodiode based on -InSe/Ge van der Waals heterojunction for polarized detection and imaging Nanoscale 15 3520-31 doi: 10.1039/D2NR06642D
    Deng T, et al 2019 Three-dimensional graphene field-effect transistors as high-performance photodetectors Nano Lett. 19 1494-503 doi: 10.1021/acs.nanolett.8b04099
    Shi T, Yao Y, Hong Y, Li Y, Lu S, Qin W, Wu X 2023 Scrolling reduced graphene oxides to induce room temperature magnetism via spatial coupling of defects Mater. Horiz. 10 4344-53 doi: 10.1039/D3MH00734K
    Hou X, Pan R, Yu Q, Zhang K, Huang G, Mei Y, Zhang D W, Zhou P 2019 Tubular 3D resistive random access memory based on rolled-up h-BN tube Small 15 1803876 doi: 10.1002/smll.201803876
    Zhou X, Tian Z, Kim H J, Wang Y, Xu B, Pan R, Chang Y J, Di Z, Zhou P, Mei Y 2019 Rolling up MoSe2 nanomembranes as a sensitive tubular photodetector Small 15 1902528 doi: 10.1002/smll.201902528
    Xia H, et al 2021 Probing the chiral domains and excitonic states in individual WS2 tubes by second-harmonic generation Nano Lett. 21 4937-43 doi: 10.1021/acs.nanolett.1c00497
    Zhang Y, Li Y, You Q, Sun J, Li K, Hong H, Kong L, Zhu M, Deng T, Liu Z 2023 A broadband 3D microtubular photodetector based on a single wall carbon nanotube-graphene heterojunction Nanoscale 15 1402-11 doi: 10.1039/D2NR05819G
    Xiang R, et al 2020 One-dimensional van der Waals heterostructures Science 367 537-42 doi: 10.1126/science.aaz2570
    Zhang S, Gao F, Feng W, Yang H, Hu Y, Zhang J, Xiao H, Li Z, Hu P A 2022 High-responsivity photodetector based on scrolling monolayer MoS2 hybridized with carbon quantum dots Nanotechnology 33 105301 doi: 10.1088/1361-6528/ac3ce1
    An Q, Xiong W, Hu F, Yu Y, Lv P, Hu S, Gan X, He X, Zhao J, Yuan S 2023 Direct growth of single-chiral-angle tungsten disulfide nanotubes using gold nanoparticle catalysts Nat. Mater. doi: 10.1038/s41563-023-01590-5
    Wang R, Zhou F, Lv L, Zhou S, Yu Y, Zhuge F, Li H, Gan L, Zhai T 2019 Modulation of the anisotropic electronic properties in ReS2 via ferroelectric film CCS Chem. 1 268-77 doi: 10.31635/ccschem.019.20180024
    Wu S, et al 2022 Ultra-sensitive polarization-resolved black phosphorus homojunction photodetector defined by ferroelectric domains Nat. Commun. 13 3198 doi: 10.1038/s41467-022-30951-y
    Ju L, Shang J, Tang X, Kou L 2020 Tunable photocatalytic water splitting by the ferroelectric switch in a 2D AgBiP2Se6 monolayer J. Am. Chem. Soc. 142 1492-500 doi: 10.1021/jacs.9b11614
    Singh P, Baek S, Yoo H H, Niu J, Park J H, Lee S 2022 Two-dimensional CIPS-InSe van der Waal heterostructure ferroelectric field effect transistor for nonvolatile memory applications ACS Nano 16 5418-26 doi: 10.1021/acsnano.1c09136
    Han M, et al 2022 Continuously tunable ferroelectric domain width down to the single-atomic limit in bismuth tellurite Nat. Commun. 13 5903 doi: 10.1038/s41467-022-33617-x
    Liu K, Dang B, Zhang T, Yang Z, Bao L, Xu L, Cheng C, Huang R, Yang Y 2022 Multilayer reservoir computing based on ferroelectric -In2Se3 for hierarchical information processing Adv. Mater. 34 2108826 doi: 10.1002/adma.202108826
    Guo F, Io W F, Dang Z, Ding R, Pang S Y, Zhao Y, Hao J 2023 Achieving reinforcement learning in a three-active-terminal neuromorphic device based on a 2D vdW ferroelectric material Mater. Horiz. 10 3719-28 doi: 10.1039/D3MH00714F
    Zhang Z, Nie J, Zhang Z, Yuan Y, Fu Y S, Zhang W 2022 Atomic visualization and switching of ferroelectric order in -In2Se3 films at the single layer limit Adv. Mater. 34 2106951 doi: 10.1002/adma.202106951
    Yan Y, Deng Q, Li S, Guo T, Li X, Jiang Y, Song X, Huang W, Yang J, Xia C 2021 In-plane ferroelectricity in few-layered GeS and its van der Waals ferroelectric diodes Nanoscale 13 16122-30 doi: 10.1039/D1NR03807A
    Liu C, Guan S, Yin H, Wan W, Wang Y, Zhang Y 2019 -GeSe: a two-dimensional ferroelectric material with doping-induced ferromagnetism Appl. Phys. Lett. 115 252904 doi: 10.1063/1.5133022
    Li W, et al 2023 Emergence of ferroelectricity in a nonferroelectric monolayer Nat. Commun. 14 2757 doi: 10.1038/s41467-023-38445-1
    Luo Y, et al 2023 Electrically switchable anisotropic polariton propagation in a ferroelectric van der Waals semiconductor Nat. Nanotechnol. 18 350-6 doi: 10.1038/s41565-022-01312-z
    Wang W, et al 2023 Electrically switchable polarization in Bi2O2Se ferroelectric semiconductors Adv. Mater. 35 2210854 doi: 10.1002/adma.202210854
    Neumayer S M, Bauer N, Basun S, Conner B S, Susner M A, Lavrentovich M O, Maksymovych P 2023 Dynamic stabilization of metastable states in triple-well ferroelectric Sn2P2S6 Adv. Mater. 35 2211194 doi: 10.1002/adma.202211194
    He Z, Du W, Dou K, Dai Y, Huang B, Ma Y 2023 Ferroelectrically tunable magnetic skyrmions in two-dimensional multiferroics Mater. Horiz. 10 3450-7 doi: 10.1039/D3MH00572K
    Yang Q, et al 2023 Ferroelectricity in layered bismuth oxide down to 1 nanometer Science 379 1218-24 doi: 10.1126/science.abm5134
    Li L, Liu X, Li Y, Xu Z, Wu Z, Han S, Tao K, Hong M, Luo J, Sun Z 2019 Two-dimensional hybrid perovskite-type ferroelectric for highly polarization-sensitive shortwave photodetection J. Am. Chem. Soc. 141 2623-9 doi: 10.1021/jacs.8b12948
    Ji C, Dey D, Peng Y, Liu X, Li L, Luo J 2020 Ferroelectricity-driven self-powered ultraviolet photodetection with strong polarization sensitivity in a two-dimensional halide hybrid perovskite Angew. Chem., Int. Ed. 59 18933-7 doi: 10.1002/anie.202005092
    Lu L, Weng W, Ma Y, Liu Y, Han S, Liu X, Xu H, Lin W, Sun Z, Luo J 2022 Anisotropy in a 2D perovskite ferroelectric drives self-powered polarization-sensitive photoresponse for ultraviolet solar-blind polarized-light detection Angew. Chem., Int. Ed. 61 e202205030 doi: 10.1002/anie.202205030
    Xu Z, Dong X, Wang L, Wu H, Liu Y, Luo J, Hong M, Li L 2023 Precisely tailoring a FAPbI3-derived ferroelectric for sensitive self-driven broad-spectrum polarized photodetection J. Am. Chem. Soc. 145 1524-9 doi: 10.1021/jacs.2c12300
    Liu Y, Guo W, Hua L, Zeng X, Yang T, Fan Q, Ma Y, Gao C, Sun Z, Luo J 2023 Giant polarization sensitivity via the anomalous photovoltaic effect in a two-dimensional perovskite ferroelectric J. Am. Chem. Soc. 145 16193-9 doi: 10.1021/jacs.3c05020
    Zhang W, et al 2022 Rapid solid-phase sulfurization growth and nonlinear optical characterization of transfer-free TiS3 nanoribbons Chem. Mater. 34 2790-7 doi: 10.1021/acs.chemmater.2c00068
    Empante T A, et al 2019 Low resistivity and high breakdown current density of 10 nm diameter van der Waals TaSe3 nanowires by chemical vapor deposition Nano Lett. 19 4355-61 doi: 10.1021/acs.nanolett.9b00958
    Chen Z, et al 2021 Direct growth of wafer-scale highly oriented graphene on sapphire Sci. Adv. 7 eabk0115 doi: 10.1126/sciadv.abk0115
    Li J, et al 2021 Single-crystal MoS2 monolayer wafer grown on Au (111) film substrates Small 17 2100743 doi: 10.1002/smll.202100743
    Hoang A T, et al 2023 Low-temperature growth of MoS2 on polymer and thin glass substrates for flexible electronics Nat. Nanotechnol. doi: 10.1038/s41565-023-01460-w
    Martella C, Mennucci C, Cinquanta E, Lamperti A, Cappelluti E, Buatier de Mongeot F, Molle A 2017 Anisotropic MoS2 nanosheets grown on self-organized nanopatterned substrates Adv. Mater. 29 1605785 doi: 10.1002/adma.201605785
    He C, Wu R, Zhu L, Huang Y, Du W, Qi M, Zhou Y, Zhao Q, Xu X 2022 Anisotropic second-harmonic generation induced by reduction of in-plane symmetry in 2D materials with strain engineering J. Phys. Chem. Lett. 13 352-61 doi: 10.1021/acs.jpclett.1c03571
    Tong L, et al 2019 Artificial control of in-plane anisotropic photoelectricity in monolayer MoS2 Appl. Mater. Today 15 203-11 doi: 10.1016/j.apmt.2019.02.001
    Wei Z, et al 2023 Van der Waals interlayer coupling induces distinct linear dichroism in WSe2 photodetectors Adv. Opt. Mater. 11 2201962 doi: 10.1002/adom.202201962
    He Z, et al 2023 Broadband, polarization-sensitive, and self-powered high-performance photodetection of hetero-integrated MoS2 on lithium niobate Research 6 0199 doi: 10.34133/research.0199
    Duan R, et al 2022 2D Cairo pentagonal PdPS: air-stable anisotropic ternary semiconductor with high optoelectronic performance Adv. Funct. Mater. 32 2113255 doi: 10.1002/adfm.202113255
    Zheng X, et al 2022 Symmetry engineering induced in-plane polarization in MoS2 through Van der Waals interlayer coupling Adv. Funct. Mater. 32 2202658 doi: 10.1002/adfm.202202658
    Li Z, et al 2020 Efficient strain modulation of 2D materials via polymer encapsulation Nat. Commun. 11 1151 doi: 10.1038/s41467-020-15023-3
    Lu J, Yao J, Yan J, Gao W, Huang L, Zheng Z, Zhang M, Li J 2020 Strain engineering coupled with optical regulation towards high-sensitivity In2S3 photodetector Mater. Horiz. 7 1427-35 doi: 10.1039/D0MH00243G
    Dirnberger F, Ziegler J D, Junior P E F, Bushati R, Taniguchi T, Watanabe K, Fabian J, Bougeard D, Chernikov A, Menon V M 2021 Quasi-1D exciton channels in strain-engineered 2D materials Sci. Adv. 7 eabj3066 doi: 10.1126/sciadv.abj3066
    Yang M, Gao W, Song Q, Zhou Y, Huang L, Zheng Z, Zhao Y, Yao J, Li J 2021 Universal strategy integrating strain and interface engineering to drive high-performance 2D material photodetectors Adv. Opt. Mater. 9 2100450 doi: 10.1002/adom.202100450
    Lu D, et al 2022 Strain-plasmonic coupled broadband photodetector based on monolayer MoS2 Small 18 2107104 doi: 10.1002/smll.202107104
    Wang Y, Yao S, Liao P, Jin S, Wang Q, Kim M J, Cheng G J, Wu W 2020 Strain-engineered anisotropic optical and electrical properties in 2D chiral-chain tellurium Adv. Mater. 32 2002342 doi: 10.1002/adma.202002342
    Li Y, Hu Z, Lin S, Lai S K, Ji W, Lau S P 2017 Giant anisotropic Raman response of encapsulated ultrathin black phosphorus by uniaxial strain Adv. Funct. Mater. 27 1600986 doi: 10.1002/adfm.201600986
    Li H, Sanchez-Santolino G, Puebla S, Frisenda R, Al-Enizi A M, Nafady A, D’Agosta R, Castellanos-Gomez A 2022 Strongly anisotropic strain-tunability of excitons in exfoliated ZrSe3 Adv. Mater. 34 2103571 doi: 10.1002/adma.202103571
    Wang J, et al 2021 Strained epitaxy of monolayer transition metal dichalcogenides for wrinkle arrays ACS Nano 15 6633-44 doi: 10.1021/acsnano.0c09983
    Gant P, Huang P, Prez de Lara D, Guo D, Frisenda R, Castellanos-Gomez A 2019 A strain tunable single-layer MoS2 photodetector Mater. Today 27 8-13 doi: 10.1016/j.mattod.2019.04.019
    Bai Y, et al 2020 Excitons in strain-induced one-dimensional moir potentials at transition metal dichalcogenide heterojunctions Nat. Mater. 19 1068-73 doi: 10.1038/s41563-020-0730-8
    Kats M A, Genevet P, Aoust G, Yu N, Blanchard R, Aieta F, Gaburro Z, Capasso F 2012 Giant birefringence in optical antenna arrays with widely tailorable optical anisotropy Proc. Natl Acad. Sci. USA 109 12364-8 doi: 10.1073/pnas.1210686109
    Venuthurumilli P K, Ye P D, Xu X 2018 Plasmonic resonance enhanced polarization-sensitive photodetection by black phosphorus in near infrared ACS Nano 12 4861-7 doi: 10.1021/acsnano.8b01660
    Zhang D, Zhou J, Liu C, Guo S, Deng J, Cai Q, Li Z, Zhang Y, Zhang W, Chen X 2019 Enhanced polarization sensitivity by plasmonic-cavity in graphene phototransistors J. Appl. Phys. 126 074301 doi: 10.1063/1.5109249
    Chen S, Cao R, Chen X, Wu Q, Zeng Y, Gao S, Guo Z, Zhao J, Zhang M, Zhang H 2020 Anisotropic plasmonic nanostructure induced polarization photoresponse for MoS2-based photodetector Adv. Mater. Interfaces 7 1902179 doi: 10.1002/admi.201902179
    Wei J, Xu C, Dong B, Qiu C W, Lee C 2021 Mid-infrared semimetal polarization detectors with configurable polarity transition Nat. Photon. 15 614-21 doi: 10.1038/s41566-021-00819-6
    Fan C, Sun X, Shi Z, L B, Chen Y, Li S, Liu J M 2023 Wafer-scale fabrication of graphene-based plasmonic photodetector with polarization-sensitive, broadband, and enhanced response Adv. Opt. Mater 11 2202860 doi: 10.1002/adom.202202860
    Wei J, Li Y, Wang L, Liao W, Dong B, Xu C, Zhu C, Ang K W, Qiu C W, Lee C 2020 Zero-bias mid-infrared graphene photodetectors with bulk photoresponse and calibration-free polarization detection Nat. Commun. 11 6404 doi: 10.1038/s41467-020-20115-1
    Xie J, Ren Z, Wei J, Liu W, Zhou J, Lee C 2023 Zero-bias long-wave infrared nanoantenna-mediated graphene photodetector for polarimetric and spectroscopic sensing Adv. Opt. Mater. 11 2202867 doi: 10.1002/adom.202202867
    Chen M, Wang Y, Zhao Z 2022 Monolithic metamaterial-integrated graphene terahertz photodetector with wavelength and polarization selectivity ACS Nano 16 17263-73 doi: 10.1021/acsnano.2c07968
    Lin T, Yao W, Liu Z, Li D, Zhang X 2023 High performance broadband full linear polarimeter based on ReS2 nanobelts Adv. Opt. Mater. 11 2300345 doi: 10.1002/adom.202300345
    Zhao S, Luo P, Yang S, Zhou X, Wang Z, Li C, Wang S, Zhai T, Tao X 2021 Low-symmetry and nontoxic 2D SiP with strong polarization-sensitivity and fast photodetection Adv. Opt. Mater. 9 2100198 doi: 10.1002/adom.202100198
    Wu J B, Zhao H, Li Y, Ohlberg D, Shi W, Wu W, Wang H, Tan P H 2016 Monolayer molybdenum disulfide nanoribbons with high optical anisotropy Adv. Opt. Mater. 4 756-62 doi: 10.1002/adom.201500707
    Dhakal K P, Ghimire G, Chung K, Duong D L, Kim S W, Kim J 2019 Probing multiphased transition in bulk MoS2 by direct electron injection ACS Nano 13 14437-46 doi: 10.1021/acsnano.9b08037
    Zhou Z, et al 2023 Low symmetric sub-wavelength array enhanced lensless polarization-sensitivity photodetector of germanium selenium Sci. Bull. 68 173-9 doi: 10.1016/j.scib.2023.01.013
    Alavi S K, Senkovskiy B V, Hertel D, Haberer D, Ando Y, Meerholz K, Fischer F R, Grneis A, Lindfors K 2020 Photodetection using atomically precise graphene nanoribbons ACS Appl. Nano Mater. 3 8343-51 doi: 10.1021/acsanm.0c01549
    Chen S, Kim S P, Chen W, Yuan J, Bashir R, Lou J, van der Zande A M, King W P 2019 Monolayer MoS2 nanoribbon transistors fabricated by scanning probe lithography Nano Lett. 19 2092-8 doi: 10.1021/acs.nanolett.9b00271
    Kotekar-Patil D, Deng J, Wong S L, Lau C S, Goh K E J 2019 Single layer MoS2 nanoribbon field effect transistor Appl. Phys. Lett. 114 013508 doi: 10.1063/1.5079860
    Watts M C, Picco L, Russell-Pavier F S, Cullen P L, Miller T S, Bartu S P, Payton O D, Skipper N T, Tileli V, Howard C A 2019 Production of phosphorene nanoribbons Nature 568 216-20 doi: 10.1038/s41586-019-1074-x
    Deng Y, Zhu C, Wang Y, Wang X, Zhao X, Wu Y, Tang B, Duan R, Zhou K, Liu Z 2022 Lithography-free, high-density MoTe2 nanoribbon arrays Mater. Today 58 8-17 doi: 10.1016/j.mattod.2022.06.002
    Abu U O, Akter S, Nepal B, Pitton K A, Guiton B S, Strachan D R, Sumanasekera G, Wang H, Jasinski J B 2022 Ultra-narrow phosphorene nanoribbons produced by facile electrochemical process Adv. Sci. 9 2203148 doi: 10.1002/advs.202203148
    Chen C, et al 2023 Water-induced bandgap engineering in nanoribbons of hexagonal boron nitride Adv. Mater. 35 2303198 doi: 10.1002/adma.202303198
    Wang X, Wen B, Gao S, Li X, Lin Z, Du L, Zhang X 2022 Strong anisotropy of multilayer -InSe-enabled polarization division multiplexing photodetection Adv. Photon. Res. 3 2200119 doi: 10.1002/adpr.202200119
    Gao Y, et al 2017 Photon-trapping microstructures enable high-speed high-efficiency silicon photodiodes Nat. Photon. 11 301-8 doi: 10.1038/nphoton.2017.37
    Hooten S, Van Vaerenbergh T, Sun P, Mathai S, Huang Z, Beausoleil R G 2020 Adjoint optimization of efficient CMOS-compatible Si-SiN vertical grating couplers for DWDM applications J. Lightwave Technol. 38 3422-30 doi: 10.1109/JLT.2020.2969097
    Zha J, et al 2023 Electronic/optoelectronic memory device enabled by tellurium-based 2D van der Waals heterostructure for in-sensor reservoir computing at the optical communication band Adv. Mater. 35 2211598 doi: 10.1002/adma.202211598
    Wang D, Zhao F, Zhang F, Mo Z, Cui B, Xia Q, Li B, He J, Zhong M 2022 Ultrasensitive and broadband polarization-sensitive topological insulator photodetector induced by element substitution Appl. Phys. Lett. 121 061104 doi: 10.1063/5.0102450
    Tong L, et al 2020 Stable mid-infrared polarization imaging based on quasi-2D tellurium at room temperature Nat. Commun. 11 2308 doi: 10.1038/s41467-020-16125-8
    Kong L, Li G, Su Q, Tan X, Zhang X, Liu Z, Liao G, Sun B, Shi T 2023 Polarization-sensitive, self-powered, and broadband semimetal MoTe2/MoS2 van der Waals heterojunction for photodetection and imaging ACS Appl. Mater. Interfaces 15 43135-44 doi: 10.1021/acsami.3c07709
    Yu Y, Xiong T, Kang J, Zhou Z, Long H, Liu D Y, Liu L, Liu Y Y, Yang J, Wei Z 2023 Dual-band real-time object identification via polarization reversal based on 2D GeSe image sensor Sci. Bull. 68 1867-70 doi: 10.1016/j.scib.2023.08.004
    Pan J, Wu Y, Zhang X, Chen J, Wang J, Cheng S, Wu X, Zhang X, Jie J 2022 Anisotropic charge trapping in phototransistors unlocks ultrasensitive polarimetry for bionic navigation Nat. Commun. 13 6629 doi: 10.1038/s41467-022-34421-3
    Chen Q, et al 2023 Three-dimensional laser writing aligned perovskite quantum dots in glass for polarization-sensitive anti-counterfeiting Adv. Opt. Mater. 11 2300090 doi: 10.1002/adom.202300090
    Mounet N, Gibertini M, Schwaller P, Campi D, Merkys A, Marrazzo A, Sohier T, Castelli I E, Cepellotti A, Pizzi G 2018 Two-dimensional materials from high-throughput computational exfoliation of experimentally known compounds Nat. Nanotechnol. 13 246-52 doi: 10.1038/s41565-017-0035-5
    Meng Y, Wang W, Ho J C 2022 One-dimensional atomic chains for ultimate-scaled electronics ACS Nano 16 13314-22 doi: 10.1021/acsnano.2c06359
    Guo J, Xiang R, Cheng T, Maruyama S, Li Y 2022 One-dimensional van der Waals heterostructures: a perspective ACS Nanosci. Au 2 3-11 doi: 10.1021/acsnanoscienceau.1c00023
    Balandin A A, Lake R K, Salguero T T 2022 One-dimensional van der Waals materialsadvent of a new research field Appl. Phys. Lett. 121 40401 doi: 10.1063/5.0108414
    Chen M, Li L, Xu M, Li W, Zheng L, Wang X 2023 Quasi-one-dimensional van der Waals transition metal trichalcogenides Research 6 0066 doi: 10.34133/research.0066
    Lee W G, Chae S, Chung Y K, Oh S, Choi J Y, Huh J 2019 New one-dimensional material Nb2Se9: theoretical prediction of indirect to direct band gap transition due to dimensional reduction Phys. Status Solidi 13 1800517 doi: 10.1002/pssr.201800517
    Choi K H, et al 2021 Ta2Ni3Se8: 1D van der Waals material with ambipolar behavior Small 17 2102602 doi: 10.1002/smll.202102602
    Qu Y, Arguilla M Q, Zhang Q, He X, Dinc M 2021 Ultrathin, high-aspect ratio, and free-standing magnetic nanowires by exfoliation of ferromagnetic quasi-one-dimensional van der Waals lattices J. Am. Chem. Soc. 143 19551-8 doi: 10.1021/jacs.1c09607
    Hu H J, Zhen W L, Weng S R, Li Y D, Niu R, Yue Z L, Xu F, Pi L, Zhang C J, Zhu W K 2022 Enhanced optoelectronic performance and photogating effect in quasi-one-dimensional BiSeI wires Appl. Phys. Lett. 120 201101 doi: 10.1063/5.0080334
    Pan Z, Lee S H, Wang K, Mao Z, Li D 2022 Elastic stiffening induces one-dimensional phonons in thin Ta2Se3 nanowires Appl. Phys. Lett. 120 062201 doi: 10.1063/5.0083980
    Long H, et al 2023 Machine vision based on an ultra-wide bandgap 2D semiconductor AsSbO3 Adv. Funct. Mater. 33 2306241 doi: 10.1002/adfm.202306241
    Tripathi R P N, Yang X, Gao J 2021 Van der Waals layered mineral getchellite with anisotropic linear and nonlinear optical responses Laser Photonics Rev. 15 2100182 doi: 10.1002/lpor.202100182
    Bindi L, Zhou X, Deng T, Li Z, Wolverton C 2023 Kanatzidisite: a natural compound with distinctive van der Waals heterolayered architecture J. Am. Chem. Soc. 145 18227-32 doi: 10.1021/jacs.3c06433
    Li S, Pam M E, Li Y, Chen L, Chien Y C, Fong X, Chi D, Ang K W 2022 Wafer-scale 2D hafnium diselenide based memristor crossbar array for energy-efficient neural network hardware Adv. Mater. 34 2103376 doi: 10.1002/adma.202103376
    Song S, Jeon S, Rahaman M, Lynch J, Rhee D, Kumar P, Chakravarthi S, Kim G, Du X, Blanton E W 2023 Wafer-scale growth of two-dimensional, phase-pure InSe Matter 6 3483-98 doi: 10.1016/j.matt.2023.07.012
    Yang P, Liu F, Li X, Hu J, Zhou F, Zhu L, Chen Q, Gao P, Zhang Y 2023 Highly reproducible epitaxial growth of wafer-scale single-crystal monolayer MoS2 on sapphire Small Methods 7 2300165 doi: 10.1002/smtd.202300165
    Mennucci C, et al 2021 Geometrical engineering of giant optical dichroism in rippled MoS2 nanosheets Adv. Opt. Mater 9 2001408 doi: 10.1002/adom.202001408
    Wei J, Chen Y, Li Y, Li W, Xie J, Lee C, Novoselov K S, Qiu C W 2023 Geometric filterless photodetectors for mid-infrared spin light Nat. Photon. 17 171-8 doi: 10.1038/s41566-022-01115-7
    Bu Y, et al 2023 Configurable circular-polarization-dependent optoelectronic silent state for ultrahigh light ellipticity discrimination Light Sci. Appl. 12 176 doi: 10.1038/s41377-023-01193-4
    Lu J, Zhang L, Ma C, Huang W, Ye Q, Yi H, Zheng Z, Yang G, Liu C, Yao J 2022 In situ integration of Te/Si 2D/3D heterojunction photodetectors toward UV-vis-IR ultra-broadband photoelectric technologies Nanoscale 14 6228-38 doi: 10.1039/D1NR08134A
    Song S, et al 2020 Wafer-scale production of patterned transition metal ditelluride layers for two-dimensional metal-semiconductor contacts at the Schottky-Mott limit Nat. Electron. 3 207-15 doi: 10.1038/s41928-020-0396-x
    Ma L, et al 2023 Van der Waals self-epitaxial growth of inch-sized superconducting niobium diselenide films Nano Lett. 23 6892-9 doi: 10.1021/acs.nanolett.3c01283
    Chen S, et al 2020 Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks Nat. Electron. 3 638-45 doi: 10.1038/s41928-020-00473-w
    Kim K, Kim S U, Choi S, Heo K, Ahn S K, Na J H 2020 High-definition optophysical image construction using mosaics of pixelated wrinkles Adv. Sci. 7 2002134 doi: 10.1002/advs.202002134
    Tang P, Xu J, Wang R K 2018 Imaging and visualization of the polarization state of the probing beam in polarization-sensitive optical coherence tomography Appl. Phys. Lett. 113 231101 doi: 10.1063/1.5050208
    Wang Y, Wu D, Yang M, Bai S, Huang S, Wang M, Liu R, Li Z, Li D, Shen Y 2023 Microscopic single-pixel polarimetry for biological tissue Appl. Phys. Lett. 122 203701 doi: 10.1063/5.0150136
    Ballesta-Garcia M, Pea-Gutirrez S, Rodrguez-Aramenda A, Garca-Gmez P, Rodrigo N, Bobi A R, Royo S 2022 Analysis of the performance of a polarized LiDAR imager in fog Opt. Express 30 41524-40 doi: 10.1364/OE.471872
    Kumar M, Seo H 2023 Reconfigurable polarized photodetector with centrosymmetric silicon enabled by flexoelectric effect for encrypted communication Adv. Opt. Mater. 2301165 doi: 10.1002/adom.202301165
    Cao A, Li S, Chen H, Deng M, Xu X, Shang L, Li Y, Cui A, Hu Z 2023 A polar-switchable and controllable negative phototransistor for information encryption Mater. Horiz. doi: 10.1039/D3MH01120H
    Flry N, Ma P, Salamin Y, Emboras A, Taniguchi T, Watanabe K, Leuthold J, Novotny L 2020 Waveguide-integrated Van der Waals heterostructure photodetector at telecom wavelengths with high speed and high responsivity Nat. Nanotechnol. 15 118-24 doi: 10.1038/s41565-019-0602-z
    Yu L, Zhang S, Zhang G, He Z, Feng X, Liu Z, Wang G, Tao W, Zheng L, Yang S 2022 Dual-enhanced photodetectors combining graphene plasmonic nanoresonators with germanium-on-insulator optical cavities IEEE Trans. Electron Devices 69 3246-50 doi: 10.1109/TED.2022.3168528
    Lan H Y, Hsieh Y H, Chiao Z Y, Jariwala D, Shih M H, Yen T J, Hess O, Lu Y J 2021 Gate-tunable plasmon-enhanced photodetection in a monolayer MoS2 phototransistor with ultrahigh photoresponsivity Nano Lett. 21 3083-91 doi: 10.1021/acs.nanolett.1c00271
    Wang X, et al 2023 Ultrasensitive photodetector based on 2D WS2/AgInGaS quantum dots heterojunction with interfacial charge transfer 2D Mater. 10 045020 doi: 10.1088/2053-1583/acf2ab
    Wang Z, Wei L, Wang S, Wu T, Sun L, Ma C, Tao X, Wang S 2023 2D SiP2/h-BN for a gate-controlled phototransistor with ultrahigh sensitivity ACS Appl. Mater. Interfaces 15 15810-8 doi: 10.1021/acsami.2c19803
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