Volume 3 Issue 2
June  2024
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Yuanbin Cheng, Qian Li, Mengyuan Chen, Fei Chen, Zhenghui Wu, Huaibin Shen. High-brightness green InP-based QLEDs enabled by in-situ passivating core surface with zinc myristate[J]. Materials Futures, 2024, 3(2): 025201. doi: 10.1088/2752-5724/ad3a83
Citation: Yuanbin Cheng, Qian Li, Mengyuan Chen, Fei Chen, Zhenghui Wu, Huaibin Shen. High-brightness green InP-based QLEDs enabled by in-situ passivating core surface with zinc myristate[J]. Materials Futures, 2024, 3(2): 025201. doi: 10.1088/2752-5724/ad3a83
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High-brightness green InP-based QLEDs enabled by in-situ passivating core surface with zinc myristate

© 2024 The Author(s). Published by IOP Publishing Ltd on behalf of the Songshan Lake Materials Laboratory
Materials Futures, Volume 3, Number 2
  • Received Date: 2024-02-04
  • Accepted Date: 2024-04-03
  • Rev Recd Date: 2024-03-25
  • Publish Date: 2024-04-23
  • AbstractThe performance of red InP and blue ZnTeSe-based quantum dots (QDs) and corresponding QD light emitting diodes (QLEDs) has already been improved significantly, whose external quantum efficiencies (EQEs) and luminances have exceeded 20% and 80 000 cd m−2, respectively. However, the inferior performance of the green InP-based device hinders the commercialization of full-color Cd-free QLED technology. The ease of oxidation of the highly reactive InP cores leads to high non-radiative recombination and poor photoluminescence quantum yield (PL QY) of the InP-based core/shell QDs, limiting the performance of the relevant QLEDs. Here, we proposed a fluoride-free synthesis strategy to in-situ passivate the InP cores, in which zinc myristate reacted with phosphine dangling bonds to form Zn-P protective layer and protect InP cores from the water and oxygen in the environment. The resultant InP/ZnSe/ZnS core/shell QDs demonstrated a high PL QY of 91%. The corresponding green-emitting electroluminescence devices exhibited a maximum EQE of 12.74%, along with a luminance of over 175 000 cd m−2 and a long T50@100 cd m−2 lifetime of over 20 000 h.
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  • Author contributions

    F Chen, Z Wu and H Shen conceived and supervised the project. Y Cheng and Q Li contributed equally. Y Cheng and Q Li synthesized and characterized the materials. M Chen and F Chen fabricated and characterized the devices. All authors participated in the scientific discussion and the manuscript modification.

    Conflict of interest

    The authors declare that they have no competing financial interests.

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