2024, Volume 3, Issue 1
Negative capacitance effect plays an important role in solving the tyranny of electronic Boltzmann as well as realizing ultra-fast and low-power operation of transistors. Among the materials with negative capacitance effects, CMOS-compatible hafnium-based ferroelectric materials have received particular attention both technically and academically. In this study, we prepared high-quality hafnium-based ferroelectric/antiferroelectric thin films with a single out-of-plane crystal orientation, which were revealed to have significantly stable negative capacitance effects by capacitance enhancement phenomena, with capacitance values of -17.41 and -27.64 pF, respectively. This work is beneficial for further promoting the application of hafnium-based ferroelectric materials in the field of microelectronics and energy storage.
Negative capacitance effect