(a) As-grown sample rapidly cooled to room temperature (25 C) from the growth temperature to introduce uniform strain into the sample. (b) von Mises stress of the WS2 flake with the hexagon nucleation center simulated using finite element analysis (FEA). The black lines in (b) are stress isolines, almost perpendicular to the boundary edge. (c), (d) Optical and AFM topography of the six-splitting WS2 layer on the SiO2/Si substrate. (e) MCD image of the WS2 using DH-EFM. Reprinted with permission from [154]. Copyright (2022) American Chemical Society.

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